TITLE

Excimer laser projection etching of GaAs

AUTHOR(S)
Brewer, Peter D.; McClure, David; Osgood, R. M.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p803
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the projection dry etching of GaAs using an excimer laser and HBr etching gas. Present experiments use photochemically generated reactants, which are spatially confined by gas phase collisions. Pattern transfer is accomplished by 1:1 imaging of the excimer laser light directly onto a GaAs substrate in a reaction cell filled with HBr gas. Resolution down to the laser beam image size is achieved through the addition of buffer gases.
ACCESSION #
9820901

 

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