TITLE

In/GaAs reaction: Effect of an intervening oxide layer

AUTHOR(S)
Ding, J.; Washburn, J.; Sands, T.; Keramidas, V. G.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p818
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of a thin (∼1.3 nm) intervening native GaAs oxide interface layer on the In/GaAs reaction have been investigated by comparing the reactions of In on GaAs substrates with the native oxide present or desorbed. Transmission electron microscopy of cross-sectional samples reveals that the thin native oxide layer, when present, disrupts the In/GaAs orientation relationship in as-deposited samples and prevents an extensive reaction between In and GaAs at 350 °C. These data also show that the In/GaAs reaction at 350 °C proceeds by dissolution of the GaAs substrate into the molten In followed by the subsequent nucleation and growth of epitaxial In1-xGaxAs particles with x≤0.2 or x≥0.8 only, indicating immiscibility. The In1-xGaxAs/GaAs interfaces are found to be structurally and compositionally abrupt to within ∼3 nm. The effects of the interfacial native oxide on the In/GaAs reaction and the suggested presence of an InAs-GaAs miscibility gap have implications for the fabrication of In/GaAs ohmic contacts by thermal reaction.
ACCESSION #
9820899

 

Related Articles

  • Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement apertures. Song, H.-W.; Han, W.S.; Kim, J.; Kim, J.-H.; KoPark, S.-H. // Electronics Letters;7/6/2006, Vol. 42 Issue 14, p808 

    Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region....

  • Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure. Huang, M. L.; Chang, Y. C.; Chang, C. H.; Lin, T. D.; Kwo, J.; Wu, T. B.; Hong, M. // Applied Physics Letters;7/3/2006, Vol. 89 Issue 1, p012903 

    The valence-band offset has been determined to be 3.83±0.05 eV at the atomic-layer-deposition Al2O3/InGaAs interface by x-ray photoelectron spectroscopy. The Au–Al2O3/InGaAs metal-oxide-semiconductor diode exhibits current-voltage characteristics dominated by Fowler-Nordheim tunneling....

  • Arsenic pressure variations during oxide desorption from gallium arsenide prior to epitaxial.... Thorpe, A.J. Spring; Majeed, A.; Priest, A.D. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1981 

    Examines the arsenic pressure variations during oxide desorption from gallium arsenide prior to epitaxial deposition. Measurement of the changes in system pressure; Attribution on qualitative differences between the arsenic species; Correlation of the pressure changes with oxide removal.

  • III–V SEMICONDUCTOR SURFACE NANOPATTERNING USING ATOMIC FORCE MICROSCOPY FOR InAs QUANTUM DOT LOCALIZATION. TRANVOUEZ, E.; DESCAMPS, A.; BREMOND, G.; TURALA, A.; REGRENY, P.; GENDRY, M. // International Journal of Nanoscience;Oct2007, Vol. 6 Issue 5, p345 

    In order to create suitable nanoholes for quantum dot (QD) localization on InP and GaAs surfaces, we used atomic force microscopy in an intermittent contact mode coupled with a modulated voltage to realized local anodization at a nanometer scale. This method leads, after a few tens of...

  • A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate. Kita, T.; Chiba, D.; Ohno, Y.; Ohno, H. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p232101 

    Using an Al2O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56Ga0.44As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the...

  • Quantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation. Qu, Y.; Liu, C.Y.; Shu Yuan; Wang, S.Z.; Yoon, S.F.; Chan, Michael C.Y.; Hong, M.H. // Journal of Applied Physics;4/1/2004, Vol. 95 Issue 7, p3422 

    Quantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs QW laser structures grown by solid-source molecular-beam epitaxy. The intensity and width of the photoluminescence peak showed a dependence on annealing temperature and time, and the maximum...

  • Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy. Tsyrlin, G. É.; Petrov, V. N.; Masalov, S. A.; Golubok, A. O. // Semiconductors;Jun99, Vol. 33 Issue 6, p677 

    The experimental results of RHEED and scanning tunneling microscopy investigations of multilayer structures of InGaAs/GaAs quantum dots, obtained by submonolayer epitaxy on singular and vicinal GaAS (100) substrates, are reported. The results presented show that spatial ordering of nano-objects...

  • A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate. Mikhrin, S. S.; Zhukov, A. E.; Kovsh, A. R.; Maleev, N. A.; Ustinov, V. M.; Shernyakov, Yu. M.; Kayander, I. N.; Kondrat’eva, E. Yu.; Livshits, D. A.; Tarasov, I. S.; Maksimov, M. V.; Tsatsul’nikov, A. F.; Ledentsov, N. N.; Kop’ev, P. S.; Bimberg, D.; Alferov, Zh. I. // Semiconductors;Jan2000, Vol. 34 Issue 1, p119 

    Spatially single-mode lasing in the wavelength range of 1.25-1.28 µm was accomplished in injection lasers on GaAs substrates. The peak output power is 110 mW at room temperature, and the differential quantum efficiency amounts to 37%. The active region of the laser is formed by an array of...

  • 1.3μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them. Sakharov, A. V.; Krestnikov, I. L.; Maleev, N. A.; Kovsh, A. R.; Zhukov, A. E.; Tsatsul’nikov, A. F.; Ustinov, V. M.; Ledentsov, N. N.; Bimberg, D.; Lott, J. A.; Alferov, Zh. I. // Semiconductors;Jul2001, Vol. 35 Issue 7, p854 

    Various structures with optical microcavities and active layers based on InGaAs/GaAs quantum dots MBE-grown on GaAs substrates were studied theoretically and experimentally. LEDs for the 1.3 µm spectral range with narrow spectral characteristics and low light beam divergence were fabricated....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics