TITLE

Deformation-free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy

AUTHOR(S)
Schilling, M.; Wünstel, K.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p710
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Submicron grating patterns written by electron beam lithography are transferred into InP substrates by reactive ion beam etching (RIBE) using an Ar/O2 gas mixture. Trapezoidal grating structures with a depth of 0.15 μm are generated. The influence of the preheating cycle prior to liquid phase epitaxy (LPE) on the grating shape is investigated as a function of different cover materials. We obtain deformation-free LPE overgrowth of the dry etched corrugations applying the GaAs cover technique. In contrast to wet chemically etched gratings identical grating profiles are formed in different crystallographic directions by RIBE and successfully overgrown by LPE.
ACCESSION #
9820881

 

Related Articles

  • Low energy carbon ion bombardment on indium phosphide and its implications for alkane-based reactive ion etching. Meharg, P. F. A.; Ogryzlo, E. A.; Bello, I.; Lau, W. M. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5623 

    Presents a study which performed carbon ion bombardment on indium phosphide with a mass-separated carbon ion beam in an ultrahigh vacuum chamber. Experimental details; Results and discussion; Conclusions.

  • Reactive ion beam etching of InP with N2 and N2/O2 mixtures. Katzschner, W.; Niggebrügge, U.; Löffler, R.; Schröter-Janssen, H. // Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p230 

    A reactive ion beam etching process (RIBE) of InP with N2 and N2/O2 mixtures is described. The application of N2 or N2/O2 ion beams to InP results in high quality surfaces with the virtual elimination of cone formation. The influence of the process parameters ion incidence angle, ion energy, ion...

  • The Formation of Developed Morphology on the Indium Phosphide Surface by Ion Argon Beam Sputtering. Soshnikov, I. P.; Lunev, A. V.; Gaevskiı, M. É.; Nesterov, S. I.; Kulagina, M. M.; Rotkina, L. G.; Barchenko, V. T.; Kalmykova, I. P.; Efimov, A. A.; Gorbenko, O. M. // Technical Physics;Jul2001, Vol. 46 Issue 7, p892 

    Self-organizing structures on the InP surface that are formed by ion-beam sputtering in the energy range 0.1-15 keV are investigated. It is shown that the processing of the InP surface by monochromatic argon beams can give rise to the formation of two, "grass" and "cone-in-pit," morphologies....

  • Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect. Pappert, S. A.; Xia, W.; Jiang, X. S.; Guan, Z. F.; Zhu, B.; Liu, Q. Z.; Yu, L. S.; Clawson, A. R.; Yu, P. K. L.; Lau, S. S. // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4352 

    Focuses on a study which described the use of elevated temperature implantation to simultaneously achieve compositional disordering and electrical isolation and form guided-wave modulators using oxygen ion beam mixing. Insight on indium phosphide (InP)-based ion-beam mixing devices; Description...

  • Ultrashort carrier lifetimes in H[sup +] bombarded InP. Lamprecht, K.F.; Juen, S.; Palmethshofer, L.; Hopfel, R.A. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p926 

    Examines ultra carrier lifetimes in H[sup +] bombarded indium phosphide semiconductors. Inversion of the luminescence spectra; Use of time-resolved photoconductivity; Generation of electron and hole populations.

  • Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures. Too, P.; Ahmed, S.; Sealy, B. J.; Gwilliam, R. // Applied Physics Letters;5/20/2002, Vol. 80 Issue 20, p3745 

    The effect of helium ion bombardment into semi-insulating (SI) InP at room temperature (RT) and 200°C has been investigated with various ion doses in the range of 4 x 10[sub 12] to 1 x 10[sub 16]/cm[sup 2] at 600 keV. The sheet resistivity of SI InP decreases by at least an order of magnitude...

  • Vapor phase epitaxy of InP using flow modulation. Wang, P. J.; Wessels, B. W. // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p564 

    We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Ã…/cycle were demonstrated. Room-temperature carrier concentrations for the...

  • Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3-dimethylaminopropyl) indium as a new indium source. Molassioti, A.; Moser, M.; Stapor, A.; Scholz, F.; Hostalek, M.; Pohl, L. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p857 

    Dimethyl (3-dimethylaminopropyl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 30–40 Pa at 30 °C,...

  • Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of.... Grundmann, M.; Krost, A. // Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3292 

    Investigates the metalorganic vapor phase epitaxy of indium phosphide stripes on narrow silicon stripes. Occurrence of complete suppression of antiphase domains; Location of the termination of the stacking faults; Achievement of smoother surface morphology and increased quantum efficiency.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics