Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques

Gelatos, A. V.; Cohen, J. D.; Harbison, J. P.
September 1986
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p722
Academic Journal
We have employed junction photocapacitance and thermal transient capacitance measurements in n-type doped hydrogenated amorphous silicon and have identified, within each of a series of samples, the optical transitions: D-→D0+e and D0→D++e, and the thermal transitions: D-→D0+e and D+→D0+h, where D-, D0, and D+ denote the three charge states of Si dangling bond defect. We have also correlated the optical and thermal transitions associated with the valence bandtail states. Lattice relaxation energies are found to be less than 0.1 eV for the dangling bond transitions, but as large as 0.5–0.6 eV for the valence bandtail states. We also determined a value of Ueff for the D-/D0 splitting of 0.24±0.07 eV.


Related Articles

  • Defects in plasma-deposited hydrogenated amorphous silicon prepared under visible light illumination. Sakata, Isao; Yamanaka, Mitsuyuki; Hayashi, Yutaka // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2561 

    Presents a study that examined the defects in undoped plasma-deposited hydrogenated amorphous silicon prepared with visible light illumination on a growing surface. Types of defect states of the material; Characteristics of the defects; Size of the defects.

  • Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon. Jackson, W. B.; Stutzmann, M. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p957 

    Annealing of metastable dangling bond defects in light-soaked undoped hydrogenated amorphous silicon (a-Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The...

  • Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon. Bube, Richard H.; Benatar, Lisa; Redfield, David // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1571 

    Presents a study which examined the correlation between the metastable defect density and the value and temperature dependence of the Fermi energy in undoped hydrogenated amorphous silicon. Experimental details; Results and discussion; Conclusion.

  • Evidence for amorphous multilayered silicon obtained by deposition under modulated pressure of hydrogen. Vergnat, M.; George, B.; Bruson, A.; Marchal, G.; Mangin, Ph.; Demai, J. J. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4536 

    Presents a study that proposed a method for the fabrication of amorphous silicon semiconductor superlattices. Methodology; Comparison between dense and less dense silicon layers; Role of hydrogen in the fabrication of superlattices.

  • Impact of Wide Bandgap p-Type nc-Si on the Performance of a-Si Solar Cells. Deng, X.; Wang, W.; Han, S.; Povolny, H.; Du, W.; Liao, X.; Xiang, X. // International Journal of Modern Physics B: Condensed Matter Phys;1/20/2002, Vol. 16 Issue 1/2, p57 

    This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (ncSi:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The player consists of nanometer-sized Si crystallites and has a wide effective bandgap determined mainly by the...

  • Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism. Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1648 

    The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all...

  • Surface reaction probability in hydrogenated amorphous silicon growth. Nuruddin, A.; Doyle, J. R.; Abelson, J. R. // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p3123 

    Focuses on a study which measured the surface reaction probability of hydrogenated amorphous silicon growth flux using a macroscopic trench substrate. Measurement of surface reaction probability; Correlation between the surface reaction probability and the film electronic quality; Role of...

  • Laser hydriding of crystalline and amorphous silicon. Schwickert, M.; Carpene, E.; Uhrmacher, M.; Schaaf, P.; Lieb, K.P. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 6, p793 

    Crystalline and ion-beam-amorphized silicon samples were irradiated with a pulsed nanosecond excimer laser in a pure hydrogen atmosphere. The hydrogen concentration was determined via the [SUP1] H([SUP15]N,αβ)[SUP12]C nuclear reaction. In the case of crystalline silicon, hydrogen...

  • Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon. Ruffell, S.; Vedi, J.; Bradby, J. E.; Williams, J. S. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p123511-1 

    The effect of local hydrogen concentration on nanoindentation-induced phase transformations has been investigated in ion-implanted amorphous silicon (a-Si). Elevated concentrations of H ranging from 5×1018 to 5×1020 cm-3, over the depth of indentation-induced phase transformed zones have...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics