Time-of-flight studies of minority-carrier diffusion in AlxGa1-xAs homojunctions

Ahrenkiel, R. K.; Dunlavy, D. J.; Hamaker, H. C.; Green, R. T.; Lewis, C. R.; Hayes, R. E.; Fardi, H.
September 1986
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p725
Academic Journal
A novel time-of-flight technique has been developed for simultaneously measuring minority-carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron-hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al0.25Ga0.75As n/p homojunctions produces minority-carrier lifetime, diffusivity, and diffusion length.


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