Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

Ringel, S. A.; Chien, H. C.; Ashok, S.
September 1986
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p728
Academic Journal
Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm-2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.


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