TITLE

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

AUTHOR(S)
Ringel, S. A.; Chien, H. C.; Ashok, S.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p728
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm-2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.
ACCESSION #
9820867

 

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