TITLE

In situ grown-in selective contacts to n-i-p-i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask

AUTHOR(S)
Döhler, G. H.; Hasnain, G.; Miller, J. N.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p704
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly selective n- and p-type contacts to GaAs doping superlattices have been achieved by using molecular beam epitaxial growth through a silicon shadow mask to form interdigital grown-in contacts. Low contact resistance, excellent diode characteristics, and efficient lateral injection electroluminescence are obtained.
ACCESSION #
9820844

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics