Optoelectronic and structural properties of sputter etched surfaces of InP

Olego, D. J.; Schachter, R.; Viscogliosi, M.; Bunz, L. A.
September 1986
Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p719
Academic Journal
The effects of sputter etching on the optoelectronic and structural properties of <100> surfaces of InP were investigated by photoluminescence (PL) and Raman scattering in conjunction with capacitance-voltage determinations of the density of surface state Nss. The surfaces were etched in an Ar+ plasma for 5 min with plasma power densities D up to 0.1 W cm-2. The near band edge PL intensity shows a striking dependence on D. Below the threshold for macroscopic structural damage, the behavior of the PL and the Nss are independent of each other. A movement of the Fermi level at the surface is invoked in order to explain the PL response.


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