Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in situ optical reflectance

Yang, L.; Abeles, B.; Persans, P. D.
September 1986
Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p631
Academic Journal
The formation of amorphous hydrogenated silicon/silicon nitride (a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H) interfaces is observed in real time by in situ optical reflectance measurements from growing a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H superlattices. The optical data are interpreted by a model of atomically abrupt interfaces with macroscopic roughness on a scale of 10 Ã….


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