TITLE

Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)n superlattice quantum well

AUTHOR(S)
Hayakawa, T.; Suyama, T.; Takahashi, K.; Kondo, M.; Yamamoto, S.; Hijikata, T.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p636
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Very short period (AlGaAs)m(GaAs)n superlattices (SL’s) have been used for single quantum wells (SQW’s) of visible laser diodes emitting in the wavelength region of 680–785 nm for the first time. The threshold current of graded-index separate-confinement-heterostructure (GRIN SCH) lasers with SL SQW’s is lower than that of lasers with AlGaAs alloy SQW’s. The ridge-waveguide structure GRIN SCH SL SQW laser emitting at 785 nm shows the low threshold current of 11 mA.
ACCESSION #
9820816

 

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