TITLE

Well size dependence of Stark shifts for heavy-hole and light-hole levels in GaAs/AlGaAs quantum wells

AUTHOR(S)
Hiroshima, T.; Lang, R.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p639
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Stark shifts for heavy-hole and light-hole levels in an isolated GaAs/AlGaAs quantum well have been analyzed by an exact numerical calculation within the envelope function approximation. The calculated results predict that for wells thicker than about 100 Ã… the Stark shift for heavy hole is larger than that for light hole; however, for thinner wells this tendency is reversed. It also predicts that this well size dependence strongly depends on the band offset ratio.
ACCESSION #
9820815

 

Related Articles

  • Subband dispersion of holes in AlAs/In[sub 0.10]Ga[sub 0.90]As/AlAs strained-layer quantum wells.... Lin, S.Y.; Zaslavsky, A. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p601 

    Determines the subband dispersion of holes in double-barrier aluminum arsenide/indium[sub 0.10]gallium[sub 0.90]arsenide/aluminum arsenide strained-layer quantum wells. Analysis of the resonant magnetotunneling of holes; Observation of mass reversal, nonparabolicity and anticrossing; Lack of...

  • Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells. Ilouz, I.; Oiknine-Schlesinger, J. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2268 

    Observes the light hole intersubbands transitions in both p-doped and photoexcited undoped strained indium gallium arsenide/indium phosphide multi-quantum well structures. Polarization of the absorption along the growth direction; Identification of impurity bound and free holes transitions;...

  • Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Rahman, F.; Gallagher, B. L.; Behet, M.; De Boeck, J. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/Al[sub x]Ga[sub 1-x]Sb quantum wells. The low thermal budget process leads to highly stable gates with extremely low leakage currents. Both electron and hole concentrations can...

  • Topological Transitions in Size-Quantized Heterostructures. Gorbatsevich, A. A.; Zhabitsky, O. V. // Journal of Experimental & Theoretical Physics;Jan2003, Vol. 96 Issue 1, p150 

    An exact solution is obtained to the problem of the spectrum of holes, described by the Luttinger Hamiltonian, in a quantum well of finite depth under arbitrary uniaxial stresses in the well and the barrier. Conditions for the topological transitions accompanied by the variation in the...

  • High-temperature hole mobility in strained quantum wells. Laikhtman, B. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p3021 

    Obtains an analytic expression for the light-hole mobility in a strained quantum well. Amount of non-polar coupling with optical phonons in quantum wells; Value of the mobility; Estimation of the possibility of the device characteristics improvement.

  • Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using.... Das, Utpal; Davis, Steve // Applied Physics Letters;1/13/1992, Vol. 60 Issue 2, p210 

    Demonstrates the tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells (QW) using fluorine-impurity-induced layer disordering. Observation of arsenic (As) and phosphorus (P) interdiffusion disordering at QW interfaces; Accumulation of P at 750 degree Celsius; Depletion...

  • Quantum confinement effects in strained silicon-germanium alloy quantum wells. Xiao, X.; Liu, C.W. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2135 

    Investigates the quantum confinement effects in strained silicon-germanium alloy quantum wells. Maximum value of the quantum confinement energy; Calculation of the hole confinement energies; Use of the 6x6 Luttinger-Kohn Hamiltonian to derive hole energy levels in quantum wells.

  • Modulation excitation spectroscopy: A method to determine the symmetry of electronic states. Armelles, G.; Alonso, M.I. // Applied Physics Letters;6/29/1992, Vol. 60 Issue 26, p3277 

    Presents a method of determining the character of the optical transitions. Application of method to gallium arsenide/aluminum gallium arsenide quantum well; Comparison of a conventional photoluminescence excitation (PLE) spectrum and a piezomodulated PLE spectrum; Difference of the relative...

  • Observation of separate electron and hole escape rates in unbiased strained InGaAsP multiple.... Takasaki, B.W.; Preston, J.S.; Evans, J.D.; Simmons, J.G.; Puetz, N. // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2525 

    Measures the first time-resolved photoconductivity in strained InGaAsP multiple quantum well laser structures. Presence of long time constant between 10 and 20 nanoseconds; Feature of escape electrons and holes from wells; Observation of the fast time constant of less than 500 picosecond.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics