TITLE

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

AUTHOR(S)
Cleaver, J. R. A.; Heard, P. J.; Evason, A. F.; Ahmed, H.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p654
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fine structures can be fabricated in silicon dioxide layers by a two-stage process in which localized ion implantation enhances the rate at which the oxide can be etched chemically. This process has been investigated as a technique for maskless microfabrication using a scanning ion beam lithography system.
ACCESSION #
9820813

 

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