High resolution electron microscopy of the GaAs/Si3N4 interface produced by multipolar plasma deposition

Rutérana, P.; Friedel, P.; Schneider, J.; Chevalier, J. P.
September 1986
Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p672
Academic Journal
The analysis of the Si3N4/GaAs interface produced by the multipolar plasma chemical vapor deposition has been carried out using high resolution electron microscopy. For an optimized deposition process, we are able to produce abrupt interfaces between the Si3N4 and the crystalline GaAs. These results are compared to the interfaces produced in the conventional chemical vapor deposition technique.


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