Activated reactive evaporation of hydrogenated amorphous silicon nitride

Shufflebotham, P. K.; White, J. F.; Card, H. C.; Kao, K. C.
September 1986
Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p651
Academic Journal
Activated reactive evaporation (ARE) of Si in NH3 and N2+H2 ambients has been used to fabricate amorphous Si:N:H thin films. The electrical and optical properties of these films are compared to those of evaporated a-Si and reactively evaporated a-Si:N:H. It is shown that the N2 and H2 gas mixture did not produce detectable N or H incorporation into the films, while substantial amounts of N and H were incorporated with NH3 gas. It is further shown that activated reactive evaporation with NH3 produces significantly more N and H incorporation than does reactive evaporation. This was clearly revealed in the electrical and optical properties of the films. The electrical and optical properties of the ARE films were comparable to materials produced by glow discharge techniques.


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