Electrical transport in amorphous hydrogenated Ge/Si superlattices

Wronski, C. R.; Persans, P. D.; Abeles, B.
September 1986
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p569
Academic Journal
Electrical conductivity measurements on a-Ge:H/a-Si:H superlattices parallel and perpendicular to the layers are explained by a simple quantum well model which yields effective electron masses 0.4m0 for a-Ge:H and 0.3m0 for a-Si:H. Space-charge-limited currents observed at high fields are used to determine the density of deep gap states in the a-Ge:H layers.


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