Negative absolute mobility of holes in n-doped GaAs quantum wells

Höpfel, R. A.; Shah, J.; Wolff, P. A.; Gossard, A. C.
September 1986
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p572
Academic Journal
We observe the effect of negative absolute mobility for minority holes in n-modulation-doped GaAs quantum wells at low temperatures. Photoinjected minority holes drift towards the positive electrode, which is shown experimentally using a photoluminescence imaging technique. The effect is attributed to ‘‘carrier drag’’ by the high-mobility electron plasma via electron-hole scattering. From a quantitative analysis we are able to determine electron-hole momentum relaxation times.


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