Shallow junction formation by preamorphization with tin implantation

Delfino, M.; Sadana, D. K.; Morgan, A. E.
September 1986
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p575
Academic Journal
Amorphizing n-type <100> silicon by tin implantation prior to implanting 10 keV boron and then annealing for 30 min at 800 °C results in a 0.22-μm-deep p+/n junction. The implanted tin prevents boron channeling, enhances the quality of the solid phase epitaxial regrowth of the silicon, and shows no measurable diffusion. A discontinuous band of dislocation loops, 20–30 nm in diameter, with a density below 1010 cm-2 remains at the original amorphous-crystalline interface after annealing. Junctions are nearly ideal and are characterized at -5 V reverse bias by an areal leakage of -5 nA cm-2 and a peripheral leakage less than -0.1 fA μm-1.


Related Articles

  • Ion implantation of Si by 12C, 29Si, and 120Sn: Amorphization and annealing effects. Wang, Kou-Wei; Spitzer, William G.; Hubler, Graham K.; Sadana, Devendra K. // Journal of Applied Physics;12/15/1985, Vol. 58 Issue 12, p4553 

    Studies the amorphization and annealing effects of ion implantation of silicon by carbon, silicon and tin. Significance of ion implantation; Mechanisms of amorphization and recrystallization; Influence of the dose on the reflection spectra for silicon-implanted silicon.

  • Formation of Sn nanocrystals in thin SiO[sub 2] film using low-energy ion implantation. Nakajima, Anri; Futatsugi, Toshiro // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3652 

    Presents a technique for fabricating tin nanocrystals in thin silicon dioxide layers using low-energy ion implantation and thermal annealing. Determination of the average diameter of the sample; Uniformity and point controllability of the nanocrystals; Location of most of the tin nanocrystals.

  • Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects. Barabanenkov, M. Yu.; Leonov, A. V.; Mordkovich, V. N.; Omel’yanovskaya, N. M. // Semiconductors;May99, Vol. 33 Issue 5, p504 

    The effect of in situ photoexcitation of the electronic subsystem of a semiconductor as a result of implantation of low ion doses on the formation of complexes of radiation defects in n-type Si is investigated by the DLTS method. The n-type Si samples were irradiated with 150-keV O[sup +, sub 2]...

  • Variation in Resistance of a Nitrogen-Enriched Silicon Layer as a Result of the Long-Range Effect of Ion Implantation. Demidov, E. S.; Karzanov, V. V.; Markov, K. A. // Semiconductors;Feb2000, Vol. 34 Issue 2, p163 

    An improvement in the insulating properties of a synthesized silicon nitride layer under the influence of ion-beam treatment of the back surface of silicon wafer was detected. This result is consistent with the infrared-spectroscopy data obtained previously and is related to the long-range...

  • N+BF[sub 2] and N+C+BF[sub 2] high-dose co-implantation in silicon. Barbadillo, L.; Cervera, M.; Hernández, M.J.; Rodríguez, P.; Piqueras, J.; Molina, S.I.; Ponce, A.; Morales, F.M. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 5, p791 

    Nitrogen and boron BF[SUB2], and nitrogen, carbon, and boron BF[SUB2] high-dose (6 × 10[SUP16]-3 × 10[SUP17] cm[SUP-2]) co-implantation were performed at energies of about 21-77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three...

  • Photothermoacoustic and photoelectric microscopy of silicon. Burbelo, R. M.; Kuz’mich, A. G.; Kucherov, I. Ya. // Semiconductors;Jun99, Vol. 33 Issue 6, p630 

    Combined photothermoacoustic and photoelectric microscopy is used to investigate silicon-based structures: an epitaxially grown n-type region in a p-type substrate, a p[sup -]p[sup +] interface obtained by implanting boron ions, and a region near a crack tip. It is concluded that the...

  • Anomalous Behavior of Arsenic Ions Implanted into Silicon at 850°C. Demakov, K. D.; Starostin, V. A. // Technical Physics;Apr2001, Vol. 46 Issue 4, p490 

    The concentration profile of arsenic in silicon was found to have two peaks at large depths. An implantation model is suggested. A comparison with results for other species is made. It is shown that mechanisms behind low- and high-temperature migrations of defect-vacancy pairs are similar to...

  • Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation. Myasnikov, A. M.; Obodnikov, V. I.; Seryapin, V. G.; Tishkovskiı, E. G.; Fomin, B. I.; Cherepov, E. I. // Semiconductors;Mar1997, Vol. 31 Issue 3, p279 

    The temperature range in which oscillating impurity distributions are formed in heavily borondoped silicon irradiated with boron ions B[sup +] is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more efficiently in the region of the maximum of...

  • Model of the pair phosphorus atom–interstitial silicon atom. Chelyadinskiı, A. R.; Burenkov, V. A. // Physics of the Solid State;Nov98, Vol. 40 Issue 11, p1806 

    Interstitial defects in silicon implanted with P and Si ions are investigated by x-ray diffraction. It is established that the interstitial complexes formed by implantation and in subsequent heat treatment do not contain a P atom. A model is proposed for the pair PI: P atom-institial Si atom....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics