TITLE

Shallow junction formation by preamorphization with tin implantation

AUTHOR(S)
Delfino, M.; Sadana, D. K.; Morgan, A. E.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p575
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphizing n-type <100> silicon by tin implantation prior to implanting 10 keV boron and then annealing for 30 min at 800 °C results in a 0.22-μm-deep p+/n junction. The implanted tin prevents boron channeling, enhances the quality of the solid phase epitaxial regrowth of the silicon, and shows no measurable diffusion. A discontinuous band of dislocation loops, 20–30 nm in diameter, with a density below 1010 cm-2 remains at the original amorphous-crystalline interface after annealing. Junctions are nearly ideal and are characterized at -5 V reverse bias by an areal leakage of -5 nA cm-2 and a peripheral leakage less than -0.1 fA μm-1.
ACCESSION #
9820748

 

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