Compensation in epitaxial cubic SiC films

Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G.
September 1986
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p584
Academic Journal
Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on (100) Si substrates are reported. Detailed analyses of the temperature-dependent carrier concentrations indicate that the samples are highly compensated (>90%), contrary to the assumption of no compensation made in previous studies of similarly prepared SiC films. Donor ionization energies ED are found to be less than one-half the values previously reported. The values for ED and the donor concentration ND, combined with results for small bulk platelets with nitrogen donors, suggest the relation ED(ND)=ED(0)-αN1/3D for cubic SiC. A curve fit gives α[bar_over_tilde:_approx._equal_to]2.6×10-5 meV cm and ED(0)[bar_over_tilde:_approx._equal_to]48 meV, which is the generally accepted value of ED(0) for nitrogen donors in cubic SiC.


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