Optically induced absorption modulation in GaAs doping superlattices

Simpson, T. B.; Pennise, C. A.; Gordon, B. E.; Anthony, J. E.; AuCoin, T. R.
September 1986
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p590
Academic Journal
Optically generated carriers are used to modulate below-gap absorption in GaAs doping superlattices. Room-temperature modulation is observed when the potential wells are deep (>=1 eV). Spatial separation of the electrons and holes leads to slow recovery of the absorption following generation of the carriers. The amplitude of the absorption modulation shows only a weak dependence on the excitation intensity.


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