Influence of built-in strain on Hall effect in InGaAs/GaAs quantum well structures with p-type modulation doping

Fritz, I. J.; Doyle, B. L.; Schirber, J. E.; Jones, E. D.; Dawson, L. R.; Drummond, T. J.
September 1986
Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p581
Academic Journal
Hall-effect data between 4 and 300 K on p-type strained quantum well structures in the InGaAs alloy system show pronounced effects due to the strain-induced splitting of the heavy- and light-hole valence bands. As a function of biaxial compression in the range 0.5–1.4%, the 77 K mobilities increase monotonically by a factor of ∼5, as does a high-temperature activation energy which is found to be nearly equal to the predicted strain splitting.


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