Stripe-geometry quantum well heterostructure AlxGa1-xAs-GaAs lasers defined by defect diffusion

Deppe, D. G.; Guido, L. J.; Holonyak, N.; Hsieh, K. C.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L.
September 1986
Applied Physics Letters;9/1/1986, Vol. 49 Issue 9, p510
Academic Journal
Impurity-free selective layer disordering, utilizing Si3N4 masking stripes and SiO2 defect (vacancy) sources, is used to realize room-temperature continuous AlxGa1-xAs-GaAs quantum well heterostructure lasers.


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