TITLE

Operation of the Si/CoSi2/Si heterostructure transistor

AUTHOR(S)
Hensel, J. C.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/1/1986, Vol. 49 Issue 9, p522
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A two-current path model is presented to describe the operation of the Si/CoSi2/Si epitaxial, heterostructure transistor. The model gives a good account of the device behavior and allows us to conclude that it works by activated charge control, in a formal sense like a bipolar transistor. The analysis further suggests that with the fine base dimensions made possible by the single crystal, vertical structure one can foresee devices with β’s of a 100 or more, at the same time maintaining a transconductance close to the optimal value 0.04 mhos/mA characteristic of a charge injection device.
ACCESSION #
9820697

 

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