Speed and effectiveness of windowless GaAs étalons as optical logic gates

Lee, Y. H.; Gibbs, H. M.; Jewell, J. L.; Duffy, J. F.; Venkatesan, T.; Gossard, A. C.; Wiegmann, W.; English, J. H.
September 1986
Applied Physics Letters;9/1/1986, Vol. 49 Issue 9, p486
Academic Journal
The effectiveness of surface recombination in speeding up the relaxation of a GaAs étalon is reported. Various thickness (1.5, 0.5, 0.3, 0.13 μm) bulk GaAs windowless samples were fabricated and tested as optical logic gates. Times for complete recovery of transmission lie between 400 and 30 ps. The response shows a roughly linear increase in speed as the sample thickness decreases, consistent with surface recombination being the dominant relaxation mechanism. A very fast cycle time of 70 ps is demonstrated using a 0.3-μm-thick windowless GaAs étalon as an all-optical logic device. Proton-bombarded samples show slower recovery and poorer contrast, and they require more gating energy.


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