TITLE

Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells

AUTHOR(S)
Schlesinger, T. E.; Kuech, T.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/1/1986, Vol. 49 Issue 9, p519
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have employed photoluminescence spectroscopy to determine the temperature dependence of the interdiffusion coefficient of Al and Ga in GaAs/Al0.3Ga0.7As quantum wells. The position of the photoluminescence peaks, due to the n=1 electron to heavy-hole transition, was measured before and after annealing the samples. A variational calculation was employed to determine the expected position of these photoluminescence peaks and from this a value of the interdiffusion coefficient was extracted. The interdiffusion process is characterized by an activation energy of about 6 eV leading to an interdiffusion coefficient at 850 °C of 4×10-19 cm2/s. This technique allows for the measurement of small diffusion coefficients in a wide variety of material systems.
ACCESSION #
9820669

 

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