Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition

Suzuki, Akira; Uemoto, Atsuko; Shigeta, Mitsuhiro; Furukawa, Katsuki; Nakajima, Shigeo
August 1986
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p450
Academic Journal
Electrical properties of non-doped and nitrogen-doped n-type β-SiC films grown on Si substrates have been investigated at 70–1000 K. Those of non-doped films remarkably depend on the Si/C ratio of the source gases. The highest mobilities of non-doped films are 510 and 1330 cm2 V-1 s-1 at 296 and 71 K, respectively. The carrier concentrations are as low as 6×1016 cm-3 even at 1000 K. Ionization energies of 34 –37 meV for nitrogen donors and 19–25 meV for unknown donors of non-doped films are obtained. Mobilities of both non-doped and nitrogen-doped films are dominated by lattice scattering at high temperatures and by impurity scattering at low temperatures. Nitrogen donors strongly affect the impurity scattering.


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