TITLE

Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas

AUTHOR(S)
Rodríguez, G. A.; Hart, R. M.; Sievers, A. J.; Keilmann, F.; Schlesinger, Z.; Wright, S. L.; Wang, W. I.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p458
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cyclotron resonance of a two-dimensional electron gas at a GaAs/GaAlAs interface is measured in the far infrared at intensities of up to 10 kW/cm2. Both the cyclotron mass and the carrier density are independent of intensity but the relaxation time changes with a dependence which is similar to that observed earlier in high dc field mobility studies.
ACCESSION #
9820643

 

Related Articles

  • Microwave absorption of a two-dimensional electron gas. Fedorych, O. M.; Moreau, S.; Byszewski, M.; Sadowski, M. L.; Potemski, M.; Studenikin, S.; Wasilewski, Z. R. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p583 

    A frequency tuneable (40 – 60 GHz) EPR spectrometer was used for direct measurements of microwave power absorption of a high mobility two-dimensional electron gas (2DEG) in GaAs/GaAlAs heterojunctions. The spectra reflect a relatively broad absorption band (due to cyclotron resonance...

  • Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas. Kalinin, K.; Krishtopenko, S.; Maremyanin, K.; Spirin, K.; Gavrilenko, V.; Biryukov, A.; Baidus, N.; Zvonkov, B. // Semiconductors;Nov2013, Vol. 47 Issue 11, p1485 

    Cyclotron resonance and magnetic transport in InP/InGaAs/InP heterostructures with axially symmetric quantum wells are studied experimentally at 4.2 K. An increase in the cyclotron mass at the Fermi level from 0.047 m to 0.057 m with an increase in the concentration of two-dimensional electrons...

  • THz Quantum Hall Conductivity Studies in a GaAs Heterojunction. Stier, A. V.; Zhang, H.; Ellis, C. T.; Eason, D.; Strasser, G.; McCombe, B. D.; Cerne, J. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p627 

    We report on Faraday rotation measurements in the THz regime of a two dimensional electron gas in the magnetic field region of cyclotron resonance. Clear steps at several filling factors in the Faraday rotation as a function of carrier density are interpreted as THz ac quantum Hall plateaus....

  • Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells. Pan, W.; Lai, K.; Bayrakci, S.P.; Ong, N.P.; Tsui, D.C.; Pfeiffer, L.N.; West, K.W. // Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3519 

    Cyclotron resonance at the microwave frequency is used to measure the band edge mass (m[sub b]) in the two-dimensional hole (2DH) system, confined in 30 nm quantum wells in the Al[sub 0.1]Ga[sub 0.9]As/GaAs/Al[sub 0.1]Ga[sub 0.9]As heterostructures. We find that for 2DH density p<=1.0×10[sup...

  • Warm electron system in the n-AlGaAs/GaAs two-dimensional electron gas. Tsubaki, Kotaro; Sugimura, Akira; Kumabe, Kenji // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p764 

    The energy relaxation time τε and the critical electron temperature Tc in the warm electron system of the AlGaAs/GaAs two-dimensional electron gas is studied. The critical electron temperature Tc is defined as the electron temperature where the electric field dependence of the electron...

  • Superior two-dimensional electron gas on (511)A GaAs. Shtrikman, Hadas; Soibel, A.; Meirav, U. // Applied Physics Letters;1/12/1998, Vol. 72 Issue 2 

    We present a comparative study of two-dimensional electron gas structures, which were grown on (511)A GaAs substrates and on conventional (100) GaAs substrates. The study included both normal interface and inverted interface structures. The (511)A presents consistently and substantially improved...

  • Submicron conducting channels defined by shallow mesa etch in GaAs-AlGaAs heterojunctions. van Houten, H.; van Wees, B. J.; Heijman, M. G. J.; André, J. P. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1781 

    A new approach to the lateral confinement of electrons in the two-dimensional electron gas of GaAs-AlGaAs heterojunctions has been developed. The electrons are electrostatically confined by a shallow mesa structure etched in the upper n-doped AlGaAs layer. This structure is fabricated using...

  • Electrostatically defined heterojunction rings and the Aharonov–Bohm effect. Ford, C. J. B.; Thornton, T. J.; Newbury, R.; Pepper, M.; Ahmed, H.; Peacock, D. C.; Ritchie, D. A.; Frost, J. E. F.; Jones, G. A. C. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p21 

    Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov–Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T<100 mK), together...

  • Mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities. Gold, A. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2100 

    We present theoretical results on the mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures for remote impurity doping and homogeneous background doping. The threshold transport, recently found experimentally by C. Jiang, D. C. Tsui, and G. Weimann [Appl. Phys. Lett. 53,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics