Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas

Rodríguez, G. A.; Hart, R. M.; Sievers, A. J.; Keilmann, F.; Schlesinger, Z.; Wright, S. L.; Wang, W. I.
August 1986
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p458
Academic Journal
Cyclotron resonance of a two-dimensional electron gas at a GaAs/GaAlAs interface is measured in the far infrared at intensities of up to 10 kW/cm2. Both the cyclotron mass and the carrier density are independent of intensity but the relaxation time changes with a dependence which is similar to that observed earlier in high dc field mobility studies.


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