TITLE

Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si

AUTHOR(S)
Shastry, S. K.; Zemon, S.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p467
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si substrates. The layers were of single domain with net carrier concentrations less than 1014 cm-3. Intentionally doped n-type layers (Nd[bar_over_tilde:_approx._equal_to]1016 cm-3) showed room-temperature electron mobility of 5780 cm2/V s. The high structural quality of GaAs is demonstrated by device characteristics as well as by x-ray diffraction measurements. The observation that an intrinsic mechanism dominates the photoluminescence spectra is another indication of high quality epitaxy.
ACCESSION #
9820638

 

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