Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si

Shastry, S. K.; Zemon, S.
August 1986
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p467
Academic Journal
The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si substrates. The layers were of single domain with net carrier concentrations less than 1014 cm-3. Intentionally doped n-type layers (Nd[bar_over_tilde:_approx._equal_to]1016 cm-3) showed room-temperature electron mobility of 5780 cm2/V s. The high structural quality of GaAs is demonstrated by device characteristics as well as by x-ray diffraction measurements. The observation that an intrinsic mechanism dominates the photoluminescence spectra is another indication of high quality epitaxy.


Related Articles

  • Donor identification in bulk gallium arsenide. Harris, T. D.; Skolnick, M. S.; Parsey, J. M.; Bhat, R. // Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p389 

    We report identification, by a spectroscopic method, of shallow donors in both epitaxial and bulk gallium arsenide. Identification is achieved using photoluminescence from resonantly excited two-electron satellites of donor bound exciton lines at 4.2 K in a magnetic field of 9.5 T. Sulfur and a...

  • Temperature effects on the photoluminescence of GaAs grown on Si. Chen, Y.; Freundlich, A.; Kamada, H.; Neu, G. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p45 

    Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are...

  • Photoluminescence and electrical properties of close space vapor transport GaAs epitaxial layers. Mimila-Arroyo, J.; Legros, R.; Bourgoin, J. C.; Chavez, F. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3652 

    Presents information on a study that showed that close spaced vapor transport-GaAs epilayers grown under proper conditions have high quality and could be used for producing some electronic devices. Research methodology; Results and discussion on the study.

  • Optical characterizations of undoped GaAs crystals grown by reduced pressure metalorganic vapor-phase epitaxy. Kusano, Junichi; Segawa, Yusaburo; Iwai, Sohachi; Aoyagi, Yoshinobu; Namba, Susumu // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1376 

    Reports on the optical characterization of undoped gallium arsenide crystals grown by reduced pressure metalorganic vapor-phase epitaxy. Measurement of the photoluminescence intensity; Optical properties of the epitaxial layer; Photoluminescence spectrum of an undoped gallium arsenide.

  • Low-temperature photoluminescence properties of high-quality GaAs layers grown by molecular-beam epitaxy. Rao, E. V. K.; Alexandre, F.; Masson, J. M.; Allovon, M.; Goldstein, L. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p503 

    Discusses the performance of low-temperature photoluminescence measurements on several molecular-beam epitaxial high-quality gallium arsenide layers showing varied electrical characteristics. System in which gallium arsenide films were grown; Description of the electrical characteristics and...

  • Effect of supersaturation on the interface abruptness of AlGaAs/GaAs/AlGaAs quantum well grown by liquid phase epitaxy. Chen, Mu-Kuen; Chang, Tien-Chih; Lin, Hao-Hsiung // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3464 

    Presents information on a study which analyzed the photoluminescence (PL) spectra of the AlGaAs/gallium arsenide/AlGaAs quantum well structures grown by two different liquid phase epitaxy methods. Experimental procedure; Origin of the high energy shoulder observed in the PL spectrum; Discussion...

  • Elimination of an artifact in the photoluminescence spectra of heavily doped C-GaAs epitaxial layers on undoped GaAs substrates. Lu, Z. H.; Majerfeld, A. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2648 

    Studies the elimination of an artifact in the photoluminescence spectra of heavily doped gallium arsenide epitaxial layers on undoped gallium arsenide substrates. Application of photoluminescence in analyzing the band gap narrowing effect in heavily doped materials; Details on the experiment;...

  • Monolayer epitaxy of GaAs at 650 °C by metal–organic chemical-vapor deposition with surface photoabsorption monitoring. Kim, Y. D.; Nakamura, F.; Yoon, E.; Forbes, D. V.; Coleman, J. J. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4209 

    We report monolayer-by-monolayer epitaxy of GaAs at 650 °C using surface photoabsorption (SPA) to monitor growth. Our results show, as confirmed by photoluminescence measurements, the possibility of growing highly accurate quantum well heterostructures by metal–organic chemical-vapor...

  • Photoluminescence of GaAs films grown by vacuum chemical epitaxy. Bernussi, A. A.; Barreto, C. L.; Carvalho, M. M. G.; Motisuke, P. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1358 

    Presents a study which investigated gallium arsenide layers grown by vacuum chemical epitaxy by low-temperature photoluminescence. Experimental details; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics