Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

Bhattacharya, Pallab K.; Dhar, Sunanda; Berger, Paul; Juang, Feng-Yuh
August 1986
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p470
Academic Journal
We have studied the effects of adding small amounts of In (0.2–1.2%) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by F. Briones and D. M. Collins [J. Electron. Mater. 11, 847 (1982)] and B. J. Skromme, S. S. Bose, B. Lee, T. S. Low, T. R. Lepkowski, R-Y. DeJule, G. E. Stillman, and J. C. M. Hwang [J. Appl. Phys. 58, 4702 (1985)].


Related Articles

  • Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP. Klem, J.; Huang, D.; Morkoç, H.; Ihm, Y. E.; Otsuka, N. // Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1364 

    GaAs1-xSbx nearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low-temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with...

  • Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. Chang, K. H.; Lee, C. P.; Wu, J. S.; Liu, D. G.; Liou, D. C. // Applied Physics Letters;10/15/1990, Vol. 57 Issue 16, p1640 

    Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of...

  • Properties of strained (In, Ga, Al)As lasers with laterally modulated active region. Ledentsov, N.N.; Bimberg, D. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2888 

    Examines structural and luminescence properties of low indium composition insertions in gallium arsenide matrix deposited by molecular beam epitaxy. Formation of dimensional islands from heteroepitaxy in lattice mismatched systems; Demonstration of electroluminescence depolarization in strained...

  • Investigation of high-quality GaAs:In layers grown by molecular-beam epitaxy. Uddin, A.; Andersson, T. G. // Journal of Applied Physics;4/15/1989, Vol. 65 Issue 8, p3101 

    Presents a study that investigated indium (In)-doped gallium arsenide layers grown by molecular-beam epitaxy. Measurement of the mobility of In; Determination of the photoluminescence; Analysis of the current-voltage and capacitance-voltage measurements.

  • Suppression of In surface segregation and growth of modulation-doped N-AlGaAs/InGaAs/GaAs structures with a high In composition by molecular-beam epitaxy. Toyoshima, Hideo; Niwa, Takaki; Yamazaki, Jin; Okamoto, Akihiko // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p3908 

    Focuses on a study which proposed a mode for describing the origin of the growth mode transition from two or three dimensions during the molecular-beam epitaxial (MBE) growth of indium gallium arsenide (InGaAs) on gallium arsenide. Discussion on the effect of the segregation of indium atoms...

  • Unintentional indium incorporation in GaAs grown by molecular beam epitaxy. Myers, D. R.; Dawson, L. R.; Klem, J. F.; Brennan, T. M.; Hammons, B. E.; Simons, D. S.; Comas, J.; Pellegrino, J. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2321 

    We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the unintentional indium density in the epitaxial GaAs is more a function of mounting technique and prior machine history than of the...

  • Molecular-beam epitaxial growth of high-quality InSb on InP and GaAs substrates. Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S. // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3618 

    Analyzes the growth of indium-antimony epitaxial layers on gallium arsenide substrates by molecular-beam epitaxy. Details on the molecular-beam epitaxial growth; Results of the study; Conclusions.

  • Optical properties of InGaAs lattice-matched to InP. Nee, T. W.; Green, A. K. // Journal of Applied Physics;11/15/1990, Vol. 68 Issue 10, p5314 

    Discusses a study which measured the optical spectra of a molecular-beam-epitaxially grown indium gallium arsenide epilayer lattice-matched on a (100) indium phosphide substrate in the visible and infrared regions. Experimental details; Spectroscopic analysis and results; Conclusion.

  • Deep states and misfit dislocations in indium-doped GaAs layers grown by molecular beam epitaxy. Ioannou, D. E.; Huang, Y. J.; Iliadis, A. A. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2258 

    We have studied the effects of adding small amounts of indium (0.6 at. %) in GaAs layers grown by molecular beam epitaxy on GaAs substrates. Photoluminescence spectra showed that epilayers of high crystal quality were obtained, and electron beam induced current microscopy revealed a number of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics