TITLE

p-channel, strained quantum well, field-effect transistor

AUTHOR(S)
Drummond, T. J.; Zipperian, T. E.; Fritz, I. J.; Schirber, J. E.; Plut, T. A.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p461
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A p-channel field-effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikov–deHaas measurements prove the existence of a two-dimensional hole gas with a strain-shifted light-hole ground state associated with a light-hole mass of 0.154m0.
ACCESSION #
9820619

 

Related Articles

  • Novel high-speed transistor based on charge emission from a quantum well. Kastalsky, A.; Grinberg, A. // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p904 

    A novel unipolar transistor employing properties of electrons confined in a single quantum well is proposed. The gate modulation of a charge density in the quantum well results in an exponentially strong variation of the output thermionic emission current to the collector. The device combines...

  • Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Chan, K. T.; Lightner, M. J.; Patterson, G. A.; Yu, K. M. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2022 

    Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test...

  • InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation. Werking, James; Tuttle, Gary; Nguyen, Chanh; Hu, Evelyn L.; Kroemer, Herbert // Applied Physics Letters;8/27/1990, Vol. 57 Issue 9, p905 

    We have fabricated planar heterostructure field-effect transistors with InAs quantum well channels and AlSb barrier layers. Argon implantation was used to form a damaged layer, which resulted in partial device to device isolation. A 1.5 μm gate device had a room-temperature extrinsic...

  • Operation of a single quantum well heterojunction field-effect photodetector. Sargood, S.K.; Taylor, G.W.; Vang, T.; Cooke, P.; Burrus, C.A.; Tell, B.; Brown-Goebeler, K. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1987 

    Examines the operation of a single quantum well heterojunction field-effect photodetector. Presentation of responsivity on gate-length device; Basis of the photodetector design; Significance of the third terminal for weighted photodetectors in neutral networks.

  • High quantum efficiency strained InGaAs/AlGaAs quantum-well resonant-cavity inversion channel.... Daryanani, S.; Taylor, G.W.; Cooke, P.; Evaldsson, P.; Vang, T. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3464 

    Demonstrates a field-effect transistor detector with a triple-strained indium gallium arsenide quantum well absorbing region. Characteristics of the detector; Achievement of quantum efficiency at a resonant wavelength; Operation of the transistor detector in the field-effect transistor.

  • High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures. Yang, Li; Cheng, Cheng-Wei; Bulsara, Mayank T.; Fitzgerald, Eugene A. // Journal of Applied Physics;May2012, Vol. 111 Issue 10, p104511 

    In this paper, we demonstrate high electron mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor (MOSFET) structures. The Al2O3 (gate dielectric)/ In0.53Ga0.47As-In0.52Al0.48As (barrier)/In0.53Ga0.47As (channel) structures were fabricated, and the mobility was...

  • Junction field-effect transistor single quantum well optical waveguide modulator employing the two-dimensional Moss–Burstein effect. Abeles, J. H.; Chan, W. K.; Colas, E.; Kastalsky, A. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2177 

    A modulation-doped junction field-effect transistor incorporating an optical waveguide under the gate modulates light by the carrier band-filling effect (two-dimensional Moss–Burstein effect) in a single quantum well, achieving a 5:1 extinction ratio in a 250-μm-long waveguide for 4 V...

  • A composite quantum well field-effect transistor. Yang, M. J.; Wang, Fu-Cheng; Yang, C. H.; Bennett, B. R.; Do, T. Q. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p85 

    We have investigated the transport properties of a field-effect transistor (FET) with a composite quantum well, which consists of two adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb barriers. This FET shows a novel V-shaped transfer characteristic, which is a direct...

  • Dc current-voltage characteristics of a double-quantum-well field-effect resonant tunneling.... Chen, J.G.; Yang, C.H. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2273 

    Examines the design and characteristics of a double quantum well (DQW) field effect resonant tunneling transistor. Observation of the current-voltage characteristics in gate tunneling current; Depletion of the quantum well close to the surface; Derivation of the peak-to-valley ratio; Similarity...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics