p-channel, strained quantum well, field-effect transistor

Drummond, T. J.; Zipperian, T. E.; Fritz, I. J.; Schirber, J. E.; Plut, T. A.
August 1986
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p461
Academic Journal
A p-channel field-effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikov–deHaas measurements prove the existence of a two-dimensional hole gas with a strain-shifted light-hole ground state associated with a light-hole mass of 0.154m0.


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