Response to ‘‘Comment on ‘Physical processes in degradation of amorphous Si:H’ ’’ [Appl. Phys. Lett. 49, 478 (1986)]

Redfield, David
August 1986
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p478
Academic Journal
Responds to the article of S. Guha and M. Hack which comments on the article 'Physical processes in degradation of amorphous Si:H,' by M. Stutzmann, W.B. Jackson and C.C. Tsai published in the 1984 issue of the journal 'Applied Physics Letters.' Presentation of an electron hole model; Energy level of the defect-generating center; Occurrence of light-induced defect.


Related Articles

  • Comment on ‘‘Physical processes in degradation of amorphous Si:H’’ [Appl. Phys. Lett. 48, 846 (1986)]. Guha, S.; Hack, M. // Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p478 

    Comments on the article 'Physical processes in degradation of amorphous Si:H,' by M. Stutzmann, W.B. Jackson and C.C. Tsai published in the 1984 issue of the journal 'Applied Physics Letters.' Occurrence of reversible light-induced effects of amorphous silicon alloys; Creation of metastable...

  • Photon Hole-Current Drag in Germanium. Vorob’ev, L. E.; Donetskiı, D. V.; Firsov, D. A. // JETP Letters;4/25/2000, Vol. 71 Issue 8, p331 

    A novel phenomenon of photon hole-current drag in hole semiconductors was observed for the first time. The effect was observed in p-Ge and consisted in the appearance of a difference in refractive indices for light propagating along an electric current and in the opposite direction. The effect...

  • Photoionization of short-range acceptor states in uniaxially deformed semiconductors. Abramov, A. A.; Tulupenko, V. N.; Vas’ko, V. T.; Firsov, D. A. // Semiconductors;Jun99, Vol. 33 Issue 6, p640 

    The photoionization cross section (the absorption coefficient) of holes which are localized on deep centers with a short-range potential and make transitions into the valence band of a uniaxially deformed Ge-type semiconductor is calculated. As a result of the fact that the acceptor level and...

  • Large amplitude ion holes. Dupree, Thomas H. // Physics of Fluids (00319171);Jun86, Vol. 29 Issue 6, p1820 

    Earlier work [Phys. Fluids 25, 277 ( 1982); Phys. Fluids 26, 2460 (1983) ] on the structure and growth of phase space density holes for ψ = - q[sub i] φ/T[sub i] < 1 is extended to ψ > 1. As in the ψ < 1 case, it is found that reflecting electrons cause the ion holes to decelerate...

  • Oscillations of a ballistic hole current through uniaxially compressed semiconductor layers. Vagidov, N. Z.; Gribnikov, Z. S.; Korshak, A. N. // Semiconductors;Feb97, Vol. 31 Issue 2, p150 

    The oscillations of the ballistic hole current through a thin base of a p[sub +]pp[sub +] diode compressed uniaxially in the direction of the current are investigated theoretically. As a result of compression, the hole dispersion relation contains sections with negative effective mass along the...

  • SuperSTEM Research Reveals Graphene Re-Knits Holes.  // SMT: Surface Mount Technology;Aug2012, Vol. 27 Issue 8, p47 

    The article reports on the discovery of graphene's ability to undergo self-repair process to mend holes by the scientists at the University of Manchester and the SuperSTEM facility at STFC's Daresbury Laboratory.

  • ERRATUM:: "WHY HOLES ARE NOT LIKE ELECTRONS III: HOW HOLES IN THE NORMAL STATE TURN INTO ELECTRONS IN THE SUPERCONDUCTING STATE". HIRSCH, J. E. // International Journal of Modern Physics B: Condensed Matter Phys;10/30/2009, Vol. 23 Issue 27, p5343 

    No abstract received.

  • TWO PSEUDOGAPS IN UNDERDOPED CUPRATES. Kristoffel, Nikolai // Modern Physics Letters B;5/20/2003, Vol. 17 Issue 10-12, p451 

    Cuprate superconductivity gaps are investigated applying the interband pairing scheme to the itinerant band and a defect "band" which is created by hole doping. A pseudogap is naturally present in this model at underdoping. Vibronic hybridization of bands renormalizes the pseudogap and two...

  • Temperature dependence of semiconductor band gaps. O'Donnell, K.P.; Chen, X. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2924 

    Reports that the application of a simple three-parameter fit to the temperature dependence of semiconductor band gaps is justified on both practical and theoretical grounds. Comparison of the fit with those obtained using the Varshni equation; Analytical expressions derived from entropy and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics