TITLE

Response to ‘‘Comment on ‘Physical processes in degradation of amorphous Si:H’ ’’ [Appl. Phys. Lett. 49, 478 (1986)]

AUTHOR(S)
Redfield, David
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p478
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Responds to the article of S. Guha and M. Hack which comments on the article 'Physical processes in degradation of amorphous Si:H,' by M. Stutzmann, W.B. Jackson and C.C. Tsai published in the 1984 issue of the journal 'Applied Physics Letters.' Presentation of an electron hole model; Energy level of the defect-generating center; Occurrence of light-induced defect.
ACCESSION #
9820614

 

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