Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers

Brokman, A.; Gat, R.; Alpern, Y.
August 1986
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p382
Academic Journal
The microstructure of low pressure chemical vapor deposited silicon layers is investigated during and after annealing. The crystallization of deposited amorphous layers is controlled by microtwins, which are generated during the nucleation stage, and yields the final morphology of elongated grains. Recrystallization and growth of the deposited polycrystalline layers involve twin coarsening which causes the final morphology of regular equiaxed grains.


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