TITLE

Effect of hydrogen plasma treatment on transparent conducting oxides

AUTHOR(S)
Major, S.; Kumar, Satyendra; Bhatnagar, M.; Chopra, K. L.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p394
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of hydrogen plasma treatment on indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and indium-doped zinc oxide (IZO) films has been studied. X-ray photoelectron spectroscopy analysis shows that ITO and FTO surfaces get reduced to yield elemental indium and tin, respectively. Annealing of the plasma treated films in air leads to re-oxidation of the reduced surface and the electro-optical properties are recovered. In contrast, IZO films are not reduced by plasma treatment and show no changes in the electrical and optical properties. The surface of plasma treated IZO films shows a higher binding energy O(1s) peak probably due to OH or OH...O species which appear to form a protective layer against plasma degradation.
ACCESSION #
9820595

 

Related Articles

  • Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO. Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Ip, K.; Overberg, M. E.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.; Luo, B.; Ren, F.; Zavada, J. M. // Journal of Applied Physics;7/1/2003, Vol. 94 Issue 1, p400 

    The effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 10[sup 17] cm[sup -3] in that region. The...

  • Nitrogen implantation of AISI 304 stainless steel with a coaxial plasma gun. Feugeas, J. N.; Llonch, E. C.; de González, C. O.; Galambos, G. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2648 

    Describes the application of a plasma focus device operated as a pulsed ion implanter. Photoelectron spectroscopy analyses of nitrided samples; Information on the experimental apparatus used; Properties of pulsed accelerators.

  • Hydrogenation of the nanopowders that form in a carbon-helium plasma stream during the introduction of Ni and Mg. Churilov, G.; Osipova, I.; Tomashevich, Ye.; Glushchenko, G.; Fedorov, A.; Popov, Z.; Bulina, N.; Vereshchagin, S.; Zhizhaev, A.; Cherepakhin, A. // Journal of Experimental & Theoretical Physics;Dec2011, Vol. 113 Issue 6, p1057 

    Composite nanoparticles consisting of magnesium, nickel, and carbon atoms are studied both theoretically and experimentally. The calculations performed in terms of the density functional theory show that the jump frequency of hydrogen atoms in nickel-containing magnesium hydride increases...

  • Creation and passivation of electron traps in n-InP treated with hydrogen plasma. Sugino, Takashi; Ninomiya, Hideaki // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1226 

    Examines the deep electron traps in n-indium phosphide treated with hydrogen plasma using isothermal capacitance transient spectroscopy measurements. Detection of five electron trap levels with activation energies; Enhancement of the density of the first level electron traps; Creation of second...

  • Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator. Yeon-Keon Moon; Sih Lee; Woong-Sun Kim; Byung-Woo Kang; Chang-Oh Jeong; Dong-Hoon Lee; Jong-Wan Park // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p013507 

    The effects of an O2 plasma-treated SiNX-based insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) were investigated. We tried to improve the interfacial characteristics by reducing the trap density between...

  • Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation. Liao, L.; Zhang, Z.; Yang, Y.; Yan, B.; Cao, H. T.; Chen, L. L.; Li, G. P.; Wu, T.; Shen, Z. X.; Tay, B. K.; Yu, T.; Sun, X. W. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p076104 

    Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased,...

  • Role of hydrogen in molecular beam epitaxy of ZnO. Sano, MIchihiro; Miyamoto, Kazuhiro; Kato, Hiroyuki; Yao, Takafumi // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5527 

    The role of hydrogen in the growth and material properties of ZnO films grown at temperature as low as 300° C by plasma-assisted molecular beam epitaxy with and without hydrogen irradiation was investigated. Results showed that during growth, the surface morphology changed from small...

  • Analysis of SF6 and F2 plasma etched silicon surfaces: An x-ray photoelectron spectroscopy investigation. Brault, P.; Ranson, P.; Estrade-Szwarckopf, H.; Rousseau, B. // Applied Physics Letters;12/17/1990, Vol. 57 Issue 25, p2649 

    X-ray photoelectron spectroscopy measurements have been performed on silicon surfaces etched with SF6 and F2 plasmas. It is shown that even if the same number of fluorine atoms is involved in both etching processes, the surfaces are quite different. The SF6 etched surface shows an overlayer...

  • Photodetachment technique for measuring H- velocities in a hydrogen plasma. Devynck, P.; Auvray, J.; Bacal, M.; Berlemont, P.; Bruneteau, J.; Leroy, R.; Stern, R. A. // Review of Scientific Instruments;Sep89, Vol. 60 Issue 9, p2873 

    This article reports work in progress on laser diagnostics of negative-ion transport velocity in H[sup -]ion volume sources. The plasma dynamics after the laser shot is discussed in detail, and the effect of the potential perturbation on the H[sup -] velocities is evaluated. A method of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics