TITLE

Lateral solid phase epitaxy of Si over SiO2 patterns and its application to silicon-on-insulator transistors

AUTHOR(S)
Sasaki, Masayoshi; Katoh, Teruo; Onoda, Hiroshi; Hirashita, Norio
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p397
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lateral solid phase epitaxy (L-SPE) of vacuum deposited amorphous Si over SiO2 patterns for various substrate orientation and growth direction has been investigated and applied to fabrication of thin-film transistors on SiO2. It has been confirmed that the L-SPE growth length depends strongly on both substrate orientation and growth direction. The maximum growth length of about 7 μm has been obtained in the L-SPE toward <100> direction on a (001) substrate. n-channel and p-channel transistors on the L-SPE layer have been developed and successfully fabricated for the first time. Channel mobilities of 380 cm2/V s for n-channel transistors and 150 cm2/V s for p-channel transistors have been obtained.
ACCESSION #
9820592

 

Related Articles

  • An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process. Takeshi Nagase; Ryo Yamashita; Atsushi Yabuuchi; Jung-Goo Lee // AIP Advances;2015, Vol. 5 Issue 11, p1 

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for...

  • Intense visible photoluminescence in amorphous SiO[sub x] and SiO[sub x]:H films prepared by evaporation. Rinnert, H.; Vergnat, M.; Marchal, G.; Burneau, A. // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    Visible photoluminescence (PL) can be observed in a-SiO[sub x] and a-SiO[sub x]:H alloys prepared by evaporation of SiO in ultrahigh vacuum and under a flow of hydrogen ions, respectively. The hydrogen and oxygen bonding is studied by infrared spectrometry. The hydrogen stability is followed by...

  • Controlled photoluminescence in amorphous-silicon-nitride microcavities. Serpengu¨zel, Ali; Tanriseven, Selim // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1388 

    Narrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity...

  • Blue-light emission from amorphous SiO[sub x] nanoropes. Peng, X.S.; Wang, X.F.; Zhang, J.; Wang, Y.W.; Sun, S.H.; Meng, G.W.; Zhang, L.D. // Applied Physics A: Materials Science & Processing;2002, Vol. 74 Issue 6, p831 

    High-yield synthesis of amorphous silicon oxide nanoropes (SiONRs) was achieved by using simple evaporation and oxidation of Si. Transmission electron microscopy observations show that the amorphous SiONRs have a length of up to several hundreds of micrometers and a diameter of 20 to 40 nm....

  • Calculation of SiO2 Diffusion Coefficients Based on Kinetic Curves of Silica Grain Dissolution. Tén, B. Ya. // Glass & Ceramics;Mar/Apr2004, Vol. 61 Issue 3/4, p111 

    A method for calculating the SiO2 diffusion coefficient is proposed and a particular example is described using a generalized kinetic dependence of the process of dissolution of silica grains in melted glass.

  • Evidence of light-emitting amorphous silicon clusters confined in a silicon oxide matrix. Rinnert, H.; Vergnat, M.; Burneau, A. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p237 

    Amorphous silicon oxide thin films were prepared by the coevaporation technique in ultrahigh vacuum. Different compositions were obtained by changing the evaporation rate of silicon. The samples were then annealed to different temperatures up to 950 °C. The composition and the structure were...

  • Effect of oxygen deficiency on the radiation sensitivity of sol-gel Ge-doped amorphous SiO2. Agnello, S.; Alessi, A.; Gelardi, F. M.; Boscaino, R.; Parlato, A.; Grandi, S.; Magistris, A. // European Physical Journal B -- Condensed Matter;Jan2008, Vol. 61 Issue 1, p25 

    We report experimental investigation by electron paramagnetic resonance (EPR) measurements of room temperature γ-ray irradiation effects in sol-gel Ge doped amorphous SiO2. We used materials with Ge content from 10 up to 104 part per million (ppm) mol obtained with different preparations....

  • A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface. Logeeswaran, V. J.; Sarkar, A.; Islam, M. S.; Kobayashi, N. P.; Straznicky, J.; Xuema Li; Wei Wu; Sagi Mathai; Tan, M. R. T.; Shih-Yuan Wang; Williams, R. S. // Applied Physics A: Materials Science & Processing;Apr2008, Vol. 91 Issue 1, p1 

    We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse...

  • Interfaces and Roughness in a Multilayer Silicon Structure. Belyaeva, A. I.; Galuza, A. A.; Kolomiets, S. N. // Semiconductors;Sep2004, Vol. 38 Issue 9, p1012 

    The results of spectral ellipsometric studies of a complex multilayer system consisting of a Si substrate, a SiO2 layer, and a layer of polycrystalline Si are reported. A method for analysis of the multilayer structure is suggested; the method is based on a heavy dependence of experimental data...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics