TITLE

Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon

AUTHOR(S)
Tsao, S. S.; Blewer, R. S.; Tsao, J. Y.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p403
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report measurements of the kinetics of tungsten metallization of porous silicon layers for the formation of buried conductors under single crystal silicon. The kinetics depend markedly on the partial pressure of the source gas and on the degree of porosity, in agreement with a proposed model in which the rate-limiting step is diffusion of WF6 source gas through the narrow pore channels. Preliminary results are presented of the full isolation of silicon islands by buried metal.
ACCESSION #
9820590

 

Related Articles

  • High-speed laser direct writing of tungsten conductors from W(CO)6. Nambu, Y.; Morishige, Y.; Kishida, S. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2581 

    High-speed laser direct writing of tungsten conductors using tungsten-hexacarbonyl [W(CO)6] is demonstrated. Tungsten lines were constructed on the Si-LSI substrate at a writing speed as high as 300 μm/s with laser-induced low-pressure chemical vapor deposition. This speed is more than two...

  • A thermodynamic and kinetic study of chemical vapor deposition of tungsten from WF6 and GeH4. van der Jeugd, C. A.; Leusink, G. J.; Janssen, G. C. A. M.; Radelaar, S. // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2353 

    Focuses on a study which presented a thermodynamic and kinetic study of the deposition of tungsten on silicon (100) from tungsten hexafluoride and germane. Experimental procedures; Results of the study; Conclusion.

  • Progress on a high current density low cost Niobium[sub 3]Tin conductor scaleable to modern niobium titanium production. Zeitlin, Bruce A.; Pyon, Taeyoung; Gregory, Eric; Scanlan, R. M. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p978 

    A number of configurations of a mono element internal tin conductor (MEIT) were fabricated designed to explore the effect of local ratio, niobium content, and tin content on the overall current density. Critical current densities on four configurations were measured, two to 17T. Current density...

  • Development of high critical current TFA-MOD YBCO coated conductors. Yamada, Yutaka; Araki, Takeshi; Kurosaki, Haruhiko; Kim, SeokBeom; Yuasa, Toyotaka; Shiohara, Yuh; Hirabayashi, Izumi; Iijima, Yasuhiro; Saito, Takashi; Shibata, Junko; Ikuhara, Yuichi; Katoh, Takeharu; Hirayama, Tsukasa // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p631 

    We report on high J[sub c] values for TFA-MOD processed YBCO, for example, 7.8 MA/cm² on LaAlO[sub 3] substrates and 2.5 MA/cm² on metallic IBAD substrates. Other than for the conventional spin coating method and IBAD-YSZ substrate, high J[sub c] values have been obtained using new methods...

  • High voltage breakdown capabilities of high temperature insulation coatings for HTS and LTS conductors. Celik, E.; Mutlu, H. I.; Akin, Y.; Okuyucu, H.; Sigmund, W.; Hascicek, Y. S. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p277 

    High temperature ZrO[sub 2] based coatings were deposited on Ag and Ag/AgMg sheathed Bi-2212 tapes from solutions derived from alkoxide-based precursors using a reel-to-reel, continuous sol-gel technique. The insulation coatings were annealed at 850°C for 20 hours under O[sub 2] flow. The...

  • Transparent conductors. Lerner, Eric J. // Industrial Physicist;Feb2000, Vol. 6 Issue 1, p6 

    Focuses on the features of transparent electrical conductors. Characterization of metals; Importance of conductivity of the stacks in electric conductors; Information on skin depth of metals in the optical frequencies.

  • Respective mobilities of metal and silicon in disilicides: Bilayers of chromium with molybdenum or tungsten. Thomas, O.; Finstad, T. G.; d’Heurle, F. M. // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2410 

    Focuses on a study which compared the mobilities of metal and silicon atoms in disilicides of chromium-molybdenum and chromium-tungsten on silicon substrates. Experimental procedures; Results; Conclusion.

  • Effects of phosphorus doping level and the annealing treatment on the oxidation kinetics of tungsten silicide. Lee, Chong Mu; Han, Suk Bin; Im, Ho Bin; Lee, Jong Gil // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1742 

    Presents information on a study which investigated the effects of phosphorus doping level in the polycrystalline silicon layer of unannealed and annealed WSi[sub2.6]-polysilicon composite films on the growth kinetics of the tungsten silicide. Annealing of some of the deposited films; Results of...

  • Evaluation of tantalum silicon alloy systems as gate electrodes. Luan, H.; Alshareef, H. N.; Lysaght, P. S.; Harris, H. R.; Wen, H. C.; Choi, K.; Senzaki, Y.; Majhi, P.; Lee, B.-H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p212110 

    The effect of Si concentration on the effective work function of tantalum silicon (Ta–Si) alloy systems as gate electrodes in direct contact with SiO2 and HfSiOx gate dielectrics has been studied extensively. It was found that the Si concentration in the Ta–Si electrodes (>=60 at....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics