Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon

Tsao, S. S.; Blewer, R. S.; Tsao, J. Y.
August 1986
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p403
Academic Journal
We report measurements of the kinetics of tungsten metallization of porous silicon layers for the formation of buried conductors under single crystal silicon. The kinetics depend markedly on the partial pressure of the source gas and on the degree of porosity, in agreement with a proposed model in which the rate-limiting step is diffusion of WF6 source gas through the narrow pore channels. Preliminary results are presented of the full isolation of silicon islands by buried metal.


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