High quality zinc sulfide epitaxial layers grown on (100) silicon by molecular beam epitaxy

Yokoyama, Meiso; Kashiro, Ko-ichi; Ohta, Shin-ichi
August 1986
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p411
Academic Journal
ZnS films were successfully grown by molecular beam epitaxy on (100) Si substrates. These high quality films, grown at a substrate temperature of 340 °C with a molecular beam flux ratio of Zn to S of unity, exhibited high crystallographic quality and revealed a flat surface. Secondary ion mass spectroscopic analysis showed that the film contained little impurity. In photoluminescence, a broad peak was observed at 2.6 eV at room temperature while an additional sharp peak at 3.6 eV appeared at 77 K. The latter is considered to be band-to-band emission and the former may be due to the Cu-blue emission.


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