Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

Eizenberg, M.; Smith, D. A.; Heiblum, M.; Segmüller, Armin
August 1986
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p422
Academic Journal
Thin layers of Nb, 100–400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40–400 °C), a quite well oriented deposit with the orientation (100)Nb||(100)GaAs and [001]Nb||[011]GaAs was obtained for a substrate temperature of ∼170 °C. Changing the substrate temperature from the optimum value of ∼170 °C in either direction resulted in a gradual deterioration of the epitaxy.


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