TITLE

Low threshold, high T0 InGaAsP/InP 1.3 μm lasers grown on p-type InP substrates

AUTHOR(S)
Hasenberg, T. C.; Garmire, E.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaAsP lasers have typically exhibited an undesirably sensitive temperature dependence of threshold current. In this letter we propose and demonstrate a new epitaxial layer structure, utilizing two identical active regions grown on a p-type substrate, which overcomes this problem through improved carrier confinement. By growing both active regions with the same liquid phase epitaxial melt, low threshold (2–2.5 kA/cm2) and high T0 (106–180 K) have been achieved for the first time in gain-guided 1.3 μm lasers.
ACCESSION #
9820563

 

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