Low threshold, high T0 InGaAsP/InP 1.3 μm lasers grown on p-type InP substrates

Hasenberg, T. C.; Garmire, E.
August 1986
Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p400
Academic Journal
InGaAsP lasers have typically exhibited an undesirably sensitive temperature dependence of threshold current. In this letter we propose and demonstrate a new epitaxial layer structure, utilizing two identical active regions grown on a p-type substrate, which overcomes this problem through improved carrier confinement. By growing both active regions with the same liquid phase epitaxial melt, low threshold (2–2.5 kA/cm2) and high T0 (106–180 K) have been achieved for the first time in gain-guided 1.3 μm lasers.


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