Surface state density distribution at an Al2O3-InP metal-insulator-semiconductor field-effect transistor measured by the charge pumping technique

Kobayashi, Takeshi; Ichikawa, Tohru; Sawai, Tetsurou
August 1986
Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p351
Academic Journal
The surface state density distribution Nss at an InP-Al2O3 interface beneath the gate electrode was obtained by applying the charge pumping measurement technique to the n-channel inversion-mode Al2O3-InP metal-insulator-semiconductor field-effect transistors. The observed Nss versus energy curve was U shaped spreading over the energy between the conduction-band edge and 1 eV above the valence-band edge. The result was in good agreement with that obtained from the capacitance-voltage curves of the metal-insulator-semiconductor diode by the Terman method.


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