Optical emission at 1.32 μm from sulfur-doped crystalline silicon

Brown, T. G.; Hall, D. G.
August 1986
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p245
Academic Journal
We report the observation of efficient photoluminescence from a new sulfur-related impurity in crystalline silicon. We tentatively identify this emission as bound-exciton luminescence from sulfur-related isoelectronic impurities. We present the results of measurements of the lifetime, temperature dependence, and external efficiency of the 1.32 μm band.


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