TITLE

Anomalous first-phase formation in rapidly thermal annealed, thin-layered Si/Ni/Si films

AUTHOR(S)
Natan, Menachem
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p257
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The initial stages of silicide formation in very thin-layered Si/Ni/Si films reacted by rapid (pulsed) annealings were investigated using the rapid thermal annealing/transmission electron microscopy technique. At least four phases, NiSi, δNi2Si, θNi2Si, and Ni31Si12, are shown to form first after 1 s annealings in the 175-300 °C temperature regime; the actual phase and its nucleation kinetics depend on the Si:Ni ratio and on substrate deposition temperature. An amorphous (Ni+Si) mixture is shown to exist as a precursor to θNi2Si and NiSi. The multiplicity of ‘‘first’’ phases and the dependence on the Si:Ni ratio contradict various ‘‘first-phase’’ rules and steady-state annealing data obtained on thicker films and in metal-Si wafer reactions. A simple model that accounts for the stoichiometry and substrate-temperature dependences is suggested.
ACCESSION #
9820498

 

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