Anomalous first-phase formation in rapidly thermal annealed, thin-layered Si/Ni/Si films

Natan, Menachem
August 1986
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p257
Academic Journal
The initial stages of silicide formation in very thin-layered Si/Ni/Si films reacted by rapid (pulsed) annealings were investigated using the rapid thermal annealing/transmission electron microscopy technique. At least four phases, NiSi, δNi2Si, θNi2Si, and Ni31Si12, are shown to form first after 1 s annealings in the 175-300 °C temperature regime; the actual phase and its nucleation kinetics depend on the Si:Ni ratio and on substrate deposition temperature. An amorphous (Ni+Si) mixture is shown to exist as a precursor to θNi2Si and NiSi. The multiplicity of ‘‘first’’ phases and the dependence on the Si:Ni ratio contradict various ‘‘first-phase’’ rules and steady-state annealing data obtained on thicker films and in metal-Si wafer reactions. A simple model that accounts for the stoichiometry and substrate-temperature dependences is suggested.


Related Articles

  • Investigations of transient phase formation in Ti/Si thin film reaction. Chaix-Pluchery, O.; Chenevier, B.; Matko, I.; Sénateur, J.P.; F. La Via // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p361 

    The analysis of temperature and time dependence of the Ti film microstructure evolution in Ti/Si thin films indicates Si diffusion occurs before any crystal phase is formed. Diffusion occurs first in Ti grain boundaries and then, within the grains. Ti5Si3 has been identified as a transient phase...

  • Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing. Xu, M.; Xu, S.; Chai, J. W.; Long, J. D.; Ee, Y. C. // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p251904 

    The authors report a simple method to significantly enhance the photoluminescence (PL) of SiNx films by incorporating a SiO2 buffer and annealing treatment under N2 protection. Strong visible PL is achieved with annealing temperature above 650 °C. Optimal PL is obtained at 800 °C. The...

  • Properties of reactively sputtered W—B—N thin film as a diffusion barrier for Cu metallization on Si. Leu, L.; Norton, D.; McElwee-White, L.; Anderson, T. // Applied Physics A: Materials Science & Processing;Mar2009, Vol. 94 Issue 3, p691 

    Thin films of W–B–N (10 nm) have been evaluated as diffusion barriers for Cu interconnects. The amorphous W–B–N thin films were prepared at room temperature via reactive magnetron sputtering using a W2B target at various N2/(Ar + N2) flow ratios. Cu diffusion tests...

  • Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator. Zengfeng Di; Miao Zhang; Weili Liu; Qinwo Shen; Suhua Luo; Zhitang Song; Chenglu Lin; Anping Huang; Chu, Paul K. // Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p262102 

    The interfacial and electrical characteristics of as-deposited or annealed A2O3 gate dielectric films grown on fully depleted SiGe-on-insulator are investigated. An interfacial layer composed of SiOx and GeOx is observed in the as-grown film. The interfacial silicate formation is effectively...

  • Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach. de Almeida, R. M. C.; Baumvol, I. J. R.; Ganem, J. J.; Trimaille, I.; Rigo, S. // Journal of Applied Physics;2/15/2004, Vol. 95 Issue 4, p1770 

    We present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N[sub 2]O, as well as annealing in NO of thermally grown silicon oxide films on Si. We obtain growth kinetics and N and O depth distributions for the...

  • The influence of surface defects on the pinhole formation in silicide thin film. Belousov, I. V.; Grib, A. N.; Kuznetsov, G. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 3, p29 

    The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the...

  • Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications. Kittl, J. A.; O'Sullivan, B. J.; Kaushik, V. S.; Lauwers, A.; Pawlak, M. A.; Hoffmann, T.; Demeurisse, C.; Vrancken, C.; Veloso, A.; Absil, P.; Biesemans, S. // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p032103 

    The effective work function (WF) of Ni3Si2 was evaluated on HfSixOy and SiO2 dielectrics. Ni3Si2 forms, in thin film Ni–Si diffusion couples with Ni to Si composition ratios between 1 and 2, after formation of a Ni2Si/NiSi stack and by its reaction at moderate thermal budgets (comparable...

  • Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO2 substrates. Hübner, R.; Hecker, M.; Mattern, N.; Hoffmann, V.; Wetzig, K.; Engelmann, H.-J.; Zschech, E. // Analytical & Bioanalytical Chemistry;Jun2004, Vol. 379 Issue 4, p568 

    Structural changes at annealing temperatures (Tan) of 500–1,100°C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal β-Ta,...

  • Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films. Chenevier, B.; Chaix-Pluchery, O.; Gergaud, P.; Thomas, O.; La Via, F. // Journal of Applied Physics;12/1/2003, Vol. 94 Issue 11, p7083 

    The structural evolution in fiber-textured Ti/Si thin films has been investigated by in situ x-ray diffraction, in a temperature range preceding the formation of silicide compounds. At low temperature, thermoelastic behavior of the metallic film was observed. Abnormal thermal behavior of both...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics