TITLE

Orientational dependence of the electron beam induced order-disorder transition in quasicrystalline Al86Mn14

AUTHOR(S)
Murray, E. R.; Ast, D. G.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p260
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The order-disorder transition of quasicrystalline Al86Mn14 under 1 MeV electron irradiation at 135 K was investigated. The dose required to completely amorphize an area was found to depend on the axis aligned with the beam. Analysis showed that, for a given orientation, the transition obeyed the excluded volume theory of disordering. The dose required was not directly proportional to the current density which indicates that some recovery takes place during irradiation.
ACCESSION #
9820496

 

Related Articles

  • Laser-induced short- and long-range orderings of Co nanoparticles on SiO2. Favazza, C.; Trice, J.; Krishna, H.; Kalyanaraman, R.; Sureshkumar, R. // Applied Physics Letters;4/10/2006, Vol. 88 Issue 15, p153118 

    Laser irradiation of ultrathin Co films leads to pattern formation by dewetting with short-range order (SRO) as well as long-range order (LRO). When a 1.5 nm thick Co film is irradiated by a single laser beam, a monomodal size distribution of particles with average diameter of 31±10 nm and...

  • Effect of the degree of disorder on electronic and optical properties in random superlattices. Wang, E. G.; Su, W. P.; Ting, C. S. // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p3004 

    Details a study which developed a three-dimensional tight-binding calculation for the effects of disorder on the electronic and optical properties in realistic random superlattices. Theoretical procedures used in the study; Analysis of the changes in band structures and optical absorption;...

  • Effect of disorder on the optical properties of short period superlattices. Strozier, J.A.; Zhang, Y.A.; Horton, C.; Ignatiev, A.; Shih, H.D. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3426 

    Examines the effect of disorder on the optical properties of short period superlattices. Use of a one-dimensional tight-binding model in the study of optical properties; Proposition of a difference vector and disorder structure factor in characterizing disordered superlattices.

  • Entropy, correlations, and ordering in two dimensions. Saija, F.; Prestipino, S.; Giaquinta, P. V.; Giaquinta, P.V. // Journal of Chemical Physics;8/15/2000, Vol. 113 Issue 7 

    The ordering of simple fluids in two dimensions was investigated using the residual multiparticle entropy (RMPE) as a measure of the relevance of correlations involving more than two particles in the configurational entropy of the system. To this end, we performed Monte Carlo simulations of two...

  • High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows. Thornton, R. L.; Welch, D. F.; Burnham, R. D.; Paoli, T. L.; Cross, P. S. // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1572 

    Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were...

  • Indirect-direct band gap transition and enhanced optical absorption of GaP/AlP random superlattice. Wang, E.G.; Ting, C.S. // Applied Physics Letters;3/13/1995, Vol. 66 Issue 11, p1400 

    Explores indirect-direct band gap transition and enhanced optical absorption of gallium phosphide/aluminum phosphide random superlattice. Effect of the application of disorder; Changes in the electronic structure; Applicability of the superlattice to optical devices.

  • Integrability and disorder in mesoscopic systems: Application to orbital magnetism. Richter, Klaus; Ullmo, Denis; Jalabert, Rodolfo A. // Journal of Mathematical Physics;Oct96, Vol. 37 Issue 10, p5087 

    Examines integrability and disorder in mesoscopic systems. Application of theory of weak disorder effects in small structures to the magnetic response of non-interacting electrons confined in integrable geometries; Averaging procedures for describing experimental situations in terms of one- and...

  • Temperature-dependent damage production in ion-implanted strained-layer superlattices. Myers, D. R.; Arnold, G. W.; Dawson, L. R.; Biefeld, R. M.; Hills, C. R.; Doyle, B. L. // Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p517 

    We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained-layer superlattices (SLS’s) for fluences sufficient to induce compositional disordering at three different implant temperatures. Dramatically different implant temperatures are required to produce...

  • Implantation-induced disordering of CuPtB-ordered GalnP. Burkard, M.; Englert, A.; Geng, C.; Mühe, A.; Scholz, F.; Schweizer, H.; Phillipp, F. // Journal of Applied Physics;8/1/1997, Vol. 82 Issue 3, p1042 

    Presents a study of a comprehensive treatment of the implantation-induced disordering (IID) of CuPt-ordered GaInP. Reduction of thermal stability of the crystal through ion implantation; Quantitative treatment of the disordering dynamics; Comparison of annealing time and temperature dependence.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics