Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon

Swanson, M. L.; Wichert, Th.; Quenneville, A. F.
August 1986
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p265
Academic Journal
We report the observation of In-P and In-Sb atom pairs in Si using the perturbed γγ angular correlation technique with 111In as radioactive probe atoms. The pairs are characterized by νQ=179(1) MHz and 271(1) MHz, respectively, and their electric field gradient tensors are axially symmetric about a <111> lattice direction. The results suggest a strong interaction between acceptor and donor atoms in elemental semiconductors like Si and Ge.


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