Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon

Swanson, M. L.; Wichert, Th.; Quenneville, A. F.
August 1986
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p265
Academic Journal
We report the observation of In-P and In-Sb atom pairs in Si using the perturbed γγ angular correlation technique with 111In as radioactive probe atoms. The pairs are characterized by νQ=179(1) MHz and 271(1) MHz, respectively, and their electric field gradient tensors are axially symmetric about a <111> lattice direction. The results suggest a strong interaction between acceptor and donor atoms in elemental semiconductors like Si and Ge.


Related Articles

  • Transfer of InP thin films from engineered porous silicon substrates. Joshi, Monali B.; Goorsky, Mark S. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p024906 

    Engineered composite substrates for thin film layer transfer applications are fabricated by incorporating the techniques of anodic etching, wafer bonding, and hydrogen-induced exfoliation. Silicon substrates (p/p+) are subjected to anodic electrochemical etching in 25% HF electrolyte to create...

  • A 24-GHz active SPST MMIC switch with INGAP/GAAS HBTS. Jong-Ryul Yang; Dong-Wook Kim; Songcheol Hong // Microwave & Optical Technology Letters;Aug2008, Vol. 50 Issue 8, p2155 

    A 24-GHz single-pole, single-throw (SPST) switch with high isolation is designed using InGaP/GaAs HBT process. To obtain high isolation in an off state, cascode structures are utilized and an additional shunt transistor is introduced in an output, which helps to reject a leakage signal. Dummy...

  • Lateral photodetectors on semi-insulating InGaAs and InP. Diadiuk, V.; Groves, S. H. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p157 

    A new type of high-performance lateral PIN photodector has been formed by alloying p-type and n-type metallic contacts onto semi-insulating InGaAs or InP without a separate junction fabrication step. Low dark current (<1 nA), high external quantum efficiency (40% at λ=1.24 μm, without...

  • Gain measurements in InGaAsP multiquantum well lasers. Dutta, N. K.; Craft, D. C.; Napholtz, S. G. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p123 

    This letter reports the polarization dependence and temperature dependence of gain spectrum in InGaAsP multiquantum well (MQW) lasers emitting at 13 μm. The gain of the TE mode is larger (by ∼40 cm-1) than that of the TM mode. The peak gain for the TM mode is shifted towards shorter...

  • Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x-ray diffraction. Pietsch, U.; Metzger, T. H.; Seifert, W. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3144 

    Presents a study that investigated a lattice matched indium-phosphorus/gallium-indium-arsenic/indium-phosphorus superlattice containing and enlarged quantum well. Use of grazing incidence x-ray diffraction using synchrotron radiation; Measurement of the in-plane rocking curve; Intensity...

  • Surface InP/In0.48Ga0.52P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes. Hestroffer, Karine; Braun, Robert; Ugur, Asli; Tomm, Jens W.; Hackbarth, Steffen; Röder, Beate; Hatami, Fariba // Journal of Applied Physics;Oct2013, Vol. 114 Issue 16, p163510 

    We describe the properties and carrier dynamics of surface InP quantum dots (QDs) on In0.48Ga0.52P, lattice-matched to GaAs (100). The structures were grown using gas-source molecular beam epitaxy. The average height and lateral size of the dots are in the range of 2-6 and 30-50 nm,...

  • Evolution of the In oxide/Si(111) interface: Analysis by electron spectroscopies. Öfner, H.; Shapira, Y.; Netzer, F. P. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1196 

    Reports on the early stages of indium oxide growth on silicon(111) by reactive evaporation at room temperature (RT) and elevated temperatures. Data on RT deposition; Oxidation at elevated temperatures.

  • Dehydroxylation of sol-gel glasses and glass composites with the use of aerosils modified by phosphorus compounds. O. Stotskaya; E. Poddenezhnyi; A. Boiko; N. Borisenko; V. Bogatyrev; N. Khimich // Glass Physics & Chemistry;Oct2008, Vol. 34 Issue 5, p569 

    Abstract  The dehydroxylating effect of aerosils modified by phosphorus oxides on the structure of xerogels and related vitreous materials is revealed. The optimum content of the phosphorus-containing aerosil in the xerogel matrix is determined. The dependence of the concentration of...

  • Charge depletion of n[sup +]-In[0.53]Ga[0.47]As potential wells by background acceptor doping. Skuras, E.; Long, A.R.; Vogele, B.; Holland, M.C.; Stanley, C.R.; Johnson, E.A.; MacKinnon, A. // Applied Physics Letters;2/15/1999, Vol. 74 Issue 7, p973 

    Analyzes the charge depletion of n[sup +]-In[sub 0.53]Ga[sub 0.47]As potential wells uniformly doped with Si donors by background acceptor doping. Electron sub-band energies and densities sensitive to the presence of the acceptors; Application of intentional background acceptor doping for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics