TITLE

Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy

AUTHOR(S)
Tischler, M. A.; Bedair, S. M.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p274
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Atomic layer epitaxy (ALE) has been employed to grow InAs and InxGa1-xAs (0
ACCESSION #
9820486

 

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