TITLE

Amplification of bulk and surface plasmons in semiconductor superlattices

AUTHOR(S)
Hawrylak, Pawel; Quinn, John J.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p280
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the amplification of bulk and surface plasmons in a type II semiconductor superlattice, which consists of a semi-infinite array of spatially separated electron and hole layers. Amplification is achieved by imposing an external drift velocity on the electrons. For drift velocities exceeding a threshold value, bulk plasmons can be amplified for an arbitrary plasmon wave vector parallel to the layers. Amplification of surface plasmons can occur only for finite wave vectors. Drift velocities required for these processes are calculated and are shown to be experimentally feasible.
ACCESSION #
9820480

 

Related Articles

  • Hole perpendicular transport in GaAs-AlGaAs superlattices. Bing Dong; Lei, X.L. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p862 

    Investigates the hole perpendicular transport properties in semiconductor superlattices (SL) using the Lei-Ting balance equation theory. Effects of the heavy-hole-light-hole (hh-lh) mixing; Causes of the hole energy spectrum; Role of the hh-lh mixing in linear and nonlinear hole transport in SL.

  • Electronic excitations in doped monolayer graphenes. Chiu, C. W.; Lee, S. H.; Chen, S. C.; Lin, M. F. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p113711-1 

    The energy dispersions and the electronic excitations of doped monolayer graphenes are, respectively, calculated from the tight-binding model and the random phase approximation. The special features of excitation spectra are dominated by the Fermi energy, the band structure, the doping type, and...

  • Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers. Kai Liu; Arunas Krotkus, Y.; Bertulis, K.; Jingzhou Xu, K.; Zhang, X. C. // Journal of Applied Physics;9/1/2003, Vol. 94 Issue 5, p3651 

    We investigate the performance of n-type GaAs plasmon emitters with surface layers grown by low-temperature molecular-beam epitaxy. The emitters have as-grown Be-doped low-temperature-grown GaAs layers on the top surface, which radiate terahertz transients with a power four times greater than...

  • Erratum: ‘‘Monte Carlo based calculations of hole transport including the hole-plasmon interaction in degenerate bulk GaAs’’ [J. Appl. Phys. 75, 4009 (1994)]. Mansour, Nabil S.; Wang, Yang; Brennan, Kevin F. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6737 

    Presents a correction to the article 'Monte Carlo Based Calculations of Hole Transport Including the Hole-Plasmon Interaction in Degenerate Bulk GaAs,' by Nabil S, Mansour, Yang Wang and Kevin F. Brennan, from the 1995 issue of the 'Journal of Applied Physics.'

  • Structurally dictated anisotropic 'designer surface plasmons'. Rance, Helen J.; Hooper, Ian R.; Hibbins, Alastair P.; Roy Sambles, J. // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p181107 

    The concept of pseudo-plasmonic surfaces at microwave frequencies is extended to include structures with a high degree of surface anisotropy. The experimental sample is fabricated by patterning a metal with a rectangular array of rectangular holes and is found to support structurally dictated...

  • Wave packets in a semiconductor superlattice. Biermann, Mark L.; Stroud Jr., C.R. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2279 

    Studies hole wave packets in a GaAs, Al[sub 0.3]Ga[sub 0.7]As superlattice. Formation of the wave packet by short laser pulse excitation; Time-dependent nature of the wave packet; Use of the wave packet formalism to study coherent hole dynamics.

  • Normal incidence intersubband optical transition in GaSb/InAs superlattices. Chen, H.H.; Houng, M.P. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p509 

    Examines the incidence of intersubband optical transition in gallium antimonide (GaSb)/indium arsenide (InAs) superlattices using a bond-orbital model. Effect of hole concentration in GaSb layers on (GaSb)[sub 10](InAs)[sub 10] absorption coefficient; Possibility of using InAs/GaSb superlattice...

  • Diffusion dynamics of holes in InxGa1-xAs/GaAs strained-layer superlattices. Gourley, P. L.; Wiczer, J. J.; Zipperian, T. E.; Dawson, L. R. // Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p100 

    We investigate the diffusion dynamics of minority-carrier holes in In0.2Ga0.8As/GaAs strained-layer superlattices by measuring their diffusion lengths, both parallel and perpendicular to the layers, and recombination lifetime for temperatures between 78 and 300 K. From these data we determine a...

  • Long term storage of inversion holes at a superlattice/GaAs interface. Melloch, M. R.; Qian, Q-D.; Cooper, J. A. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1471 

    We report an investigation of the long term retention characteristic of a hole inversion layer at the interface between an AlAs/GaAs superlattice and GaAs in the dark. The retention time constant at 77 K is measured to be 34 h. From the temperature dependence of the retention time constant, an...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics