TITLE

Delta-doped ohmic contacts to n-GaAs

AUTHOR(S)
Schubert, E. F.; Cunningham, J. E.; Tsang, W. T.; Chiu, T. H.
PUB. DATE
August 1986
SOURCE
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p292
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new type of nonalloyed ohmic contact to GaAs is realized by molecular beam epitaxy. The ohmic characteristic of the metal-semiconductor junction is obtained by placing a highly δ-doped donor layer a few lattice constants away from the metal-semiconductor interface of the contact and thus keeping the tunneling barrier extremely thin. The current-voltage characteristic of the δ-doped contacts is strictly linear. The measured contact resistance is in the 10-6 Ω cm2 range. Theoretical analysis of the tunneling current through the triangular barrier predicts contact resistances in the range 10-7–10-9 Ω cm2. In spite of the high doping concentration ([bar_over_tilde:_approx._equal_to]1021 cm-3) the surface morphology of the sample shows no degradation.
ACCESSION #
9820478

 

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