Delta-doped ohmic contacts to n-GaAs

Schubert, E. F.; Cunningham, J. E.; Tsang, W. T.; Chiu, T. H.
August 1986
Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p292
Academic Journal
A new type of nonalloyed ohmic contact to GaAs is realized by molecular beam epitaxy. The ohmic characteristic of the metal-semiconductor junction is obtained by placing a highly δ-doped donor layer a few lattice constants away from the metal-semiconductor interface of the contact and thus keeping the tunneling barrier extremely thin. The current-voltage characteristic of the δ-doped contacts is strictly linear. The measured contact resistance is in the 10-6 Ω cm2 range. Theoretical analysis of the tunneling current through the triangular barrier predicts contact resistances in the range 10-7–10-9 Ω cm2. In spite of the high doping concentration ([bar_over_tilde:_approx._equal_to]1021 cm-3) the surface morphology of the sample shows no degradation.


Related Articles

  • Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs. Kirchner, P. D.; Jackson, T. N.; Pettit, G. D.; Woodall, J. M. // Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p26 

    We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3...

  • Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs. Patkar, M.P.; Chin, T.P. // Applied Physics Letters;3/13/1995, Vol. 66 Issue 11, p1412 

    Explores very low resistance ohmic contacts using low-temperature molecular beam epitaxy of gallium arsenide films. Improvement of film stability; Protection of high space charge density layer on the surface; Result of heavy beryllium doping.

  • Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K. Jones, K. A.; Linfield, E. H.; Frost, J. E. F. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4197 

    The specific contact resistance (rc) of NiGeAu and PdGeTiPt ohmic contacts to n-GaAs and TiPd and PdGeTiPt ohmic contacts to p+-GaAs were determined as a function of temperature between 4.2 and 350 K. The low rc obtained for some of the contacts at 4.2 K implies that much of the total contact...

  • Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy. Peng, C. K.; Chen, J.; Chyi, J.; Morkoç, H. // Journal of Applied Physics;7/1/1988, Vol. 64 Issue 1, p429 

    Examines the formation of extremely low alloyed and nonalloyed ohmic contact resistances on n-type InAs cap layer on InGaAs by molecular-beam epitaxy. Information on the samples; Method used in evaluating the contact resistances; Conclusion of the study.

  • Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs. Kuchta, D.; Whinnery, J. R.; Smith, J. S.; Woodall, J. M.; Pettit, D. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1534 

    High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is...

  • Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of /GaAs. Sedova, I. V.; L’vova, T. V.; Ulin, V. P.; Sorokin, S. V.; Ankudinov, A. V.; Berkovits, V. L.; Ivanov, S. V.; Kop’ev, P. S. // Semiconductors;Jan2002, Vol. 36 Issue 1, p54 

    Atomic-force microscopy was applied to compare the topographies of naturally oxidized surfaces of GaAs(100) substrates and those substrates treated with aqueous solutions of sodium sulfide in various stages of their preparation for growth of ZnSe-based heterostructures by molecular beam epitaxy...

  • Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 degrees C. Eaglesham, D.J.; Pfeiffer, L.N.; West, K.W.; Dykaar, D.R. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p65 

    Studies the low-temperature limit to gallium arsenide (GaAs) molecular beam epitaxy. Use of transmission electron microscopy of layers grown under a variety of conditions; Temperature, growth rate, composition and defect density during the growth of the epitaxial layer.

  • Realization of low facet density and the growth mechanism of GaAs on GaAs(110) by... Lopez, M.; Takano, Y.; Pak, K.; Yonezu, H. // Applied Physics Letters;2/11/1991, Vol. 58 Issue 6, p580 

    Reports on the successful growth of smooth gallium arsenide (GaAs) layers by migration-enhanced epitaxy on exactly oriented substrates. Complete coverage by facets of the surface of layers grown by conventional molecular beam epitaxy; Reduction of facet density by three orders of magnitude...

  • Growth and structural characterization of embedded InAsSb on GaAs-coated patterned... De Boeck, J.; Dobbelaere, W.; Vanhellemont, J.; Mertens, R.; Borghs, G. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p928 

    Investigates the molecular beam epitaxial growth of InAsSb on gallium arsenide (GaAs)-coated patterned silicon (Si) substrates. Comparison of the InAsSb epilayer morphology for different substrate conditions; Threaded defect density of the InAsSb layers; Evidence of a regular array of misfit...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics