Surface oxidation of GaAs and AlGaAs in low-energy Ar/O2 reactive ion beam etching

Kinoshita, Haruhisa; Ishida, Toshimasa; Kaminishi, Katsuzo
July 1986
Applied Physics Letters;7/28/1986, Vol. 49 Issue 4, p204
Academic Journal
Ion beam etching (IBE) and reactive IBE (RIBE) of GaAs and AlxGa1-xAs(x=0.3–0.5) were examined using Ar and Ar/O2 (O2: 2.0 and 5.3 mol %). In Ar IBE of 100 eV or more, neither GaAs nor AlGaAs was substantially oxidized and equirate etching was observed. In 50 eV Ar/O2 (2–5.3%) RIBE, however, both GaAs and AlGaAs were oxidized and etched little. In 100 eV Ar/O2 (2%) RIBE, especially, AlGaAs was oxidized but GaAs was not, and a maximum selectivity of 13 was obtained in the etching of GaAs/Al0.5Ga0.5As. Impinging O+ ions were found to be the main origin of oxidation.


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