TITLE

Zn diffusion in InP: Effect of substrate dopant concentration

AUTHOR(S)
Serreze, H. B.; Marek, H. S.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/28/1986, Vol. 49 Issue 4, p210
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed open-tube diffusion of Zn into n-type InP over the temperature range 525–675 °C. For heavily doped InP, the observed diffusion profiles are consistent with an interstitial-substitutional model where the interstitial Zn is doubly ionized. However, for undoped InP the profiles have a significantly different shape and the diffusion is deeper. Assumption of neutral interstitial Zn is able to account for these two changes. A tentative model is proposed to explain the dependence of the interstitial Zn ionization state on the starting substrate dopant concentration.
ACCESSION #
9820431

 

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