TITLE

Impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattices

AUTHOR(S)
Bulman, G. E.; Zipperian, T. E.; Dawson, L. R.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/28/1986, Vol. 49 Issue 4, p212
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact ionization coefficients for electrons and holes have been measured in In0.2Ga0.8As/GaAs strained-layer superlattices (SLS’s) for transport perpendicular to the superlattice. The pure electron and hole initiated primary photocurrents were produced in p+n mesa photodiodes having In0.1Ga0.9As alloy photon absorption regions and an SLS active region carrier concentration of 7.4×1015 cm-3. The impact ionization coefficient for electrons is found to be larger than for holes with a ratio that varies from 1.8 at 2.7×105 V/cm to 1.4 at 3.8×105 V/cm.
ACCESSION #
9820429

 

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