TITLE

Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-GaxAl1-xAs interfaces

AUTHOR(S)
Cibert, J.; Petroff, P. M.; Werder, D. J.; Pearton, S. J.; Gossard, A. C.; English, J. H.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/28/1986, Vol. 49 Issue 4, p223
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The kinetics of implantation enhanced interdiffusion at GaAs-GaxAl1-xAs interfaces is investigated by cathodoluminescence and transmission electron microscopy. Localized Ga+ implantation leads to enhancement of the interdiffusion by about two orders of magnitude at 950 °C. A complete recovery of the optical quality of the material and local alteration of the band gap is observed after rapid thermal annealing. The role of intrinsic interdiffusion is identified. Control of the interdiffusion kinetics has allowed the fabrication of ultrasmall structures with good optical properties.
ACCESSION #
9820421

 

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