Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer

Hayakawa, T.; Suyama, T.; Kondo, M.; Takahashi, K.; Yamamoto, S.; Hijikata, T.
July 1986
Applied Physics Letters;7/28/1986, Vol. 49 Issue 4, p191
Academic Journal
The effect of a compositionally graded buffer layer (CGBL) in AlGaAs laser diodes grown by molecular beam epitaxy is presented. The threshold current and the differential quantum efficiency are improved by a factor of ∼2. The lifetime is markedly improved by using a CGBL and it is comparable to that of lasers grown by liquid phase epitaxy.


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